NAND04GR4B2DZL6F datasheet, PDF

NAND04GR4B2DZL6F: Description512M X 8 FLASH 3V PROM, 25000 ns, PDSO48; Categorystorage storage; File Size2MB，69 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com

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NAND04GR4B2DZL6F Overview

512M X 8 FLASH 3V PROM, 25000 ns, PDSO48

Parameter Name	Attribute value
Maker	Numonyx ( Micron )
Parts packaging code	LGA
package instruction	VBGA,
Contacts	52
Reach Compliance Code	unknow
ECCN code	3A991.B.1.A
Maximum access time	25000 ns
JESD-30 code	R-PBGA-B52
length	17 mm
memory density	4294967296 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	52
word count	268435456 words
character code	256000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE
Parallel/Serial	PARALLEL
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	0.65 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
type	SLC NAND TYPE
width	12 mm

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