Variable Capacitance Diode, 12pF C(T), 28V, Silicon, DIE-1
Parameter Name | Attribute value |
Parts packaging code | DIE |
package instruction | O-LALF-W2 |
Contacts | 1 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | LOW LEAKAGE |
Minimum breakdown voltage | 28 V |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode Capacitance Tolerance | 5% |
Minimum diode capacitance ratio | 4.2 |
Nominal diode capacitance | 12 pF |
Diode component materials | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE |
JESD-30 code | O-LALF-W2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Certification status | Not Qualified |
minimum quality factor | 13 |
Maximum reverse current | 0.1 µA |
Reverse test voltage | 25 V |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |
Base Number Matches | 1 |