SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
Absolute Maximum Ratings
Parameter
Case Operating Temperature Range
Storage Temperature Range
Voltage on Any Pin with Respect to GND (except V
CC
, V
PP
, A
9
and RP)
(1)
Voltage on Pins A
9
or RP with Respect to GND (except V
CC
, V
PP
, A
9
and RP)
(1,2)
V
PP
Program Voltage with Respect to GND during Block Erase/ and Word/Byte Write
(1,2)
Vcc Supply Voltage with Respect to Ground
(1)
Output Short Circuit Current
(3)
Range
-55 to +125
-65 to +150
-2.0 to +7.0
-2.0 to +13.5
-2.0 to +14.0
-2.0 to +7.0
100
Units
°C
°C
V
V
V
V
mA
Notes:
1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot to -2.0V for periods < 20nS. Maximum DC voltage on input/output
pins is Vcc + 0.5V, which may overshoot to Vcc + 2.0V for periods < 20nS.
2. Maximum DC voltage on Vpp may overshoot to +14.0V for periods < 20nS. Maximum DC voltage on RP or A
9
may overshoot to V
CC
+ 0.5V for periods <20nS
3. Output shorted for no more than 1 second. No more than one output shorted at one time.
NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage. These are stress rating only. Operation beyond the "Oper-
ation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability.
Recommended Operating Conditions
Symbol
V
CC
Parameter
5V Power Supply Voltage (10%)
3.3V Power Supply Voltage (±0.3V) (Consult Factory)
V
IH
V
IL
T
A
Input High Voltage (3.3V & 5V V
CC
)
Input Low Voltage (3.3V & 5V V
CC
)
Operating Temperature (Military)
Minimum
+4.5
+3.0
+2.0
-0.5
-55
Maximum
+5.5
+3.6
V
cc
+ 0.5
+0.8
+125
Units
V
V
V
V
°C
Capacitance
(f = 1MHz, T
A
= 25°C)
Symbol
C
AD
C
OE
C
CE
C
RP
C
WE
C
WP
C
I
/
O
Parameter
A0 – A19 Capacitance
OE Capacitance
CE Capacitance
RP Capacitance
WE Capacitance
WP Capacitance
I/O0 – I/O31 Capacitance
Maximum
50
50
20
50
60
50
20
Units
pF
pF
pF
pF
pF
pF
pF
Capacitance Guaranteed by design, but not tested.
DC Characteristics – CMOS Compatible
(T
A
= -55°C to +125°C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
+3.3V V
CC
(1)
Parameter
Input Load Current
Output Leakage Current
Vcc Standby Current
Vcc Deep Power-Down Current
Vcc Read Current
Vcc Write Current
Sym
I
IL
I
LO
I
CCS
I
CCD
I
CCR
I
CCW
1
I
CCW
2
Vcc Erase Current
I
CCE
1
I
CCE
2
Vcc Erase Suspend Current
V
PP
Standby Current
Aeroflex Circuit Technology
+5.0V V
CC
Standard
Min
-1
-10
Max
+1
+10
600
32
260
200
180
180
160
48
60
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
µA
Units
Conditions
V
CC
= V
CC
Max., V
IN
= V
CC
or GND
V
CC
= V
CC
Max., V
IN
= V
CC
or GND
V
CC
= V
CC
Max., CE = RP = WP = V
CC
± 0.2V
V
CC
= V
CC
Max., V
IN
= V
CC
or GND, RP = GND ± 0.2V
V
CC
= V
CC
Max., CE = GND, f = 10MHz (5V), 5MHz (3.3V),
I
OUT
= 0 mA, Inputs = GND ± 0.2V or V
CC
± 0.2V
V
PP
= V
PPH
1
(at 5V), Word Write in Progress (x32)
V
PP
= V
PPH
2
(at 12V), Word Write in Progress (x32)
V
PP
= V
PPH
1
(at 5V),Block Erase in Progress
V
PP
= V
PPH
2
(at 12V),Block Erase in Progress
CE = V
IH
, Block Erase Suspend
V
PP
< V
PPH
2
3
Typical
Min
-1
-10
Max
+1
+10
440
32
120
120
100
120
100
32
60
I
CCES
I
PPS
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
DC Characteristics – CMOS Compatible
(T
A
= -55°C to +125°C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
+3.3V V
CC
(1)
Parameter
V
PP
Deep Power Down Current
V
PP
Read Current
V
PP
Write Current
Sym
I
PPD
I
PPR
I
PPW
1
I
PPW
2
V
PP
Erase Current
I
PPE
1
I
PPE
2
V
PP
Erase Suspend Current
RP Boot Block Unlock Current
Output Low Voltage
Output High Voltage
I
PPES
I
RP
V
OL
V
OH
1
V
OH
2
V
PP
Lock-Out Voltage
V
PP
(Program/Erase Operations)
V
PP
(Program/Erase Operations)
V
CC
Erase/Write Lock Voltage
RP Unlock Voltage
V
PPLK
V
PPH
1
V
PPH
2
V
LKO
V
HH
RP = GND ± 0.2V
V
PP
> V
PPH
2
V
PP
= V
PPH
1
(at 5V), Word Write in Progress (x32)
V
PP
= V
PPH
2
(at 12V), Word Write in Progress (x32)
V
PP
= V
PPH
1
(at 5V), Block Erase in Progress
V
PP
= V
PPH
2
(at 12V), Block Erase in Progress
V
PP
= V
PPH
,
Block Erase Suspend in Progress
RP = V
HH
, V
PP
= 12V
V
CC
= V
CC
Min., I
OL
= 5.8 mA (5V), 2 mA (3.3V)
V
CC
= V
CC
Min., I
OH
= -2.5 mA
V
CC
= V
CC
Min., I
OH
= -100 µA
Complete Write Protection
V
PP
= at 5V
V
PP
= at 12V
Locked Condition
Boot Block Write/Erase, V
PP
= 12V
0.85 x
V
CC
V
CC
-
0.4V
0.0
4.5
11.4
0
11.4
1.5
5.5
12.6
2.0
12.6
Conditions
Typical
Min
Max
40
800
120
100
120
100
800
2
0.45
+5.0V V
CC
Standard
Min
Max
40
800
120
100
100
80
800
2
0.45
0.85 x
V
CC
V
CC
-
0.4V
0.0
4.5
11.4
0
11.4
1.5
5.5
12.6
2.0
12.6
µA
µA
mA
mA
mA
mA
µA
mA
V
V
V
V
V
V
V
V
Units
Notes:
1. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not tested).
AC Characteristics – Write/Erase/Program Operations – WE Controlled
(T
A
= -55°C to +125°C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Symbol
Parameter
JEDEC
Standard
t
AVAV
t
PHWL
t
ELWL
t
PHHWH
t
VPWH
t
AVWH
t
DVWH
t
WLWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHQV
1
t
WHQV
2
t
WHQV
3
t
WHQV
4
+3.3V V
CC
Typical
120nS
Min Max
120
1.5
0
200
200
90
70
90
0
0
0
30
6
0.3
0.3
0.6
0
0
(2)
+4.5V to +5.5V V
CC
80nS
Min Max
80
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
100nS
Min Max
100
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
100
100
120nS
Min Max
120
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
100
nS
µS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
µS
Sec
Sec
Sec
nS
nS
nS
Units
Write Cycle Time
RP High Recovery to WE Going Low
CE Setup to WE Going Low
Boot Block Unlock Setup to WE Going High
(1)
V
PP
Setup to WE Going High
(1)
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
Data Hold Time from WE High
Address Hold Time from WE High
CE Hold Time from WE High
WE Pulse Width High
Duration of Word Write Operation
(1)
(x32)
Duration of Erase Operation (Boot)
(1)
Duration of Erase Operation (Parameter)
(1)
Duration of Erase Operation (Main)
(1)
V
PP
Hold from Valid SRD
(1)
RP V
HH
Hold from Valid SRD
(1)
Boot Block Lock Delay
(1)
t
QVVL
t
QVPH
t
PHBR
200
Notes:
1. Guaranteed by design, not tested.
2. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not tested).
Aeroflex Circuit Technology
4
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
AC Characteristics – Write/Erase/Program Operations, CE Controlled
(T
A
= -55°C to +125°C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Symbol
Parameter
JEDEC
Standard
t
AVAV
+3.3V
V
CC
(2)
Typical
120nS
Min Max
120
1.5
0
200
200
90
70
90
0
0
0
20
6
0.3
0.3
0.6
0
0
200
80nS
+4.5V to +5.5V V
CC
Units
100nS
Min Max
100
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
100
100
120nS
Min Max
120
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
100
nS
µS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
µS
Sec
Sec
Sec
nS
nS
nS
Min Max
80
.45
0
100
100
60
60
60
0
0
0
20
6
0.3
0.3
0.6
0
0
Write Cycle Time
RP High Recovery to CE Low
WE Setup to CE Going Low
Boot Block Unlock Setup to CE Going High
V
PP
Setup to CE Going High
(1)
Address Setup to CE Going High
Data Setup to CE Going High
CE Pulse Width
Data Hold Time from CE High
Address Hold Time from CE High
WE Hold Time from CE High
CE Pulse Width High
Duration of Word Write Operation
(1)
(1)
t
PHEL
t
WLEL
t
PHHEH
t
VPEH
t
AVEH
t
DVEH
t
ELEH
t
EHDX
t
EHAX
t
EHWH
t
EHEL
(x32)
(1)
t
EHQV
1
t
EHQV
2
t
EHQV
3
t
EHQV
4
t
QVVL
t
QVPH
t
PHBR
Duration of Erase Operation (Boot)
(1)
Duration of Erase Operation (Parameter)
Duration of Erase Operation (Main)
V
PP
Hold from Valid SRD
(1)
RP V
HH
Hold from Valid SRD
(1)
Boot Block Lock Delay
(1)
(1)
NOTES:
1. Sampled, but not 100% tested.
2. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not Tested).
AC Characteristics – Read Only Operations
(T
A
= -55°C to +125°C, V
CC
= +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Symbol
Parameter
JEDEC
Standard
t
AVAV
t
AVQV
t
ELQV
t
PHQV
t
GLQV
t
ELQX
t
EHQZ
t
GLQX
t
GHQZ
t
OH
+3.3V
V
CC
(2)
Typical
120nS
Min Max
120
120
120
1.5
65
0
55
0
45
0
0
0
30
0
30
80nS
Min Max
80
80
80
+4.5V to +5.5V V
CC
Units
100nS
Min Max
100
100
100
.45
40
0
30
0
30
0
0
0
30
0
30
120nS
Min Max
120
120
120
.45
40
nS
nS
nS
µS
nS
nS
nS
nS
nS
nS
Read Cycle Time
Address to Output Delay
CE to Output Delay
RP to Output Delay
OE to Output Delay
CE to Output in Low Z
(1)
CE to Output in High Z
(1)
OE to Output in Low Z
(1)
OE to Output in High Z
(1)
Output Hold from Address, CE, or OE Change,
Whichever Occurs First
(1)
.45
40
Notes:
1. Guaranteed by design, but not tested.
2. Performance at V
CC
= +4.5V to +5.5V is guaranteed. Performance at V
CC
= +3.3V is typical (Not Tested).
Aeroflex Circuit Technology
5
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
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