80N03 datasheet, PDF - EEWORLD Datasheet

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80N03: DescriptionMOSFET; CategoryDiscrete semiconductor; File Size1MB，6 Pages; ManufacturerGoford Semiconductor; Websitehttp://www.goford.cn/; Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!

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80N03 Overview

MOSFET

Features

Product Name: MOSFET

Product model: 80N03

Product Description:

The 80N03 uses advanced trench technology

And design to provide excellent RDS (ON ) with

Low gate charge . It can be used in a wide

Vanety of applications .

?? VDS = 30 V, ID = 80 A

RDS(ON) < 6 mΩ @ VGS = 10 V

?? High density cell design for ultra low Rdson

?? Fully characterized Avalanche voltage and current

?? Good stabilty and unifomity with high EAS

?? Excellent package for good heat dissipation

?? Special process technology for high ESD capability

parameter:

Drain-Source Voltage VDS 30 V

Gate-Source Voltage VGS 80 V

Drain Current-Continuous ID 50 A

Drain Current -Pulsed (Note 1) IDM 170 A

Maximum Power Dissipation PD 83W

VGS Gate-to-Source Voltage ± 20 V

EAS Single PulseAvalanche Energy 150 mJ

Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃

Package: TO-252-2L

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80N03

DESCRIPTION

The 80N03 uses advanced trench technology

And design to provide excellent

Low

gate charge .

RDS (ON ) with

30V

DS(ON)

80A

It can be used in a wide

Vanety of applications .

GENERAL FEATURES

= 30 V, I

= 80 A

DS(ON)

< 6 mΩ @ V

= 10 V

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Good stabilty and unifomity with high E

Excellent package for good heat dissipation

Special process technology for high ESD capability

TO-252-2L top view

Application

Power switching application

Hard Switched and High Frequency Circuits

Ordering Information

PART NUMBER

PACKAGE

BRAND

80N03

Uninterruptible Power Supply

TO-252-2L

OGFD

www.goford.cn

TEL：0755-86350980

FAX：0755-86350963

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