EEPROM, 8KX8, 250ns, Parallel, NMOS, CQCC32, CERAMIC, LCC-32
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Parts packaging code | QFJ |
package instruction | QCCN, LCC32,.45X.55 |
Contacts | 32 |
Reach Compliance Code | unknown |
ECCN code | 3A001.A.2.C |
Maximum access time | 250 ns |
command user interface | NO |
Data polling | YES |
JESD-30 code | R-CQCC-N32 |
JESD-609 code | e0 |
length | 13.97 mm |
memory density | 65536 bit |
Memory IC Type | EEPROM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 32 |
word count | 8192 words |
character code | 8000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 8KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | QCCN |
Encapsulate equivalent code | LCC32,.45X.55 |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
page size | 32 words |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Programming voltage | 5 V |
Certification status | Not Qualified |
ready/busy | YES |
Filter level | 38535Q/M;38534H;883B |
Maximum seat height | 2.54 mm |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | NMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | NO LEAD |
Terminal pitch | 1.27 mm |
Terminal location | QUAD |
switch bit | NO |
width | 11.43 mm |
Maximum write cycle time (tWC) | 10 ms |
Base Number Matches | 1 |
AM2864BE-250/BUA | AM2864BE-300/BXA | AM2864BE-300/BUA | AM2864BE-200/BUA | AM2864BE-350/BUA | AM2864BE-350/BXA | AM2864BE-200/BXA | AM2864BE-250/BXA | |
---|---|---|---|---|---|---|---|---|
Description | EEPROM, 8KX8, 250ns, Parallel, NMOS, CQCC32, CERAMIC, LCC-32 | EEPROM, 8KX8, 300ns, Parallel, NMOS, CDIP28, SIDE BRAZED, CERAMIC, DIP-28 | EEPROM, 8KX8, 300ns, Parallel, NMOS, CQCC32, CERAMIC, LCC-32 | EEPROM, 8KX8, 200ns, Parallel, NMOS, CQCC32, CERAMIC, LCC-32 | EEPROM, 8KX8, 350ns, Parallel, NMOS, CQCC32, CERAMIC, LCC-32 | EEPROM, 8KX8, 350ns, Parallel, NMOS, CDIP28, SIDE BRAZED, CERAMIC, DIP-28 | EEPROM, 8KX8, 200ns, Parallel, NMOS, CDIP28, SIDE BRAZED, CERAMIC, DIP-28 | EEPROM, 8KX8, 250ns, Parallel, NMOS, CDIP28, SIDE BRAZED, CERAMIC, DIP-28 |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Parts packaging code | QFJ | DIP | QFJ | QFJ | QFJ | DIP | DIP | DIP |
package instruction | QCCN, LCC32,.45X.55 | DIP, DIP28,.6 | QCCN, LCC32,.45X.55 | QCCN, LCC32,.45X.55 | QCCN, LCC32,.45X.55 | DIP, DIP28,.6 | DIP, DIP28,.6 | DIP, DIP28,.6 |
Contacts | 32 | 28 | 32 | 32 | 32 | 28 | 28 | 28 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknow | unknow |
ECCN code | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
Maximum access time | 250 ns | 300 ns | 300 ns | 200 ns | 350 ns | 350 ns | 200 ns | 250 ns |
command user interface | NO | NO | NO | NO | NO | NO | NO | NO |
Data polling | YES | YES | YES | YES | YES | YES | YES | YES |
JESD-30 code | R-CQCC-N32 | R-CDIP-T28 | R-CQCC-N32 | R-CQCC-N32 | R-CQCC-N32 | R-CDIP-T28 | R-CDIP-T28 | R-CDIP-T28 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
length | 13.97 mm | 35.56 mm | 13.97 mm | 13.97 mm | 13.97 mm | 35.56 mm | 35.56 mm | 35.56 mm |
memory density | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bi | 65536 bi |
Memory IC Type | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 32 | 28 | 32 | 32 | 32 | 28 | 28 | 28 |
word count | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
character code | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
organize | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | QCCN | DIP | QCCN | QCCN | QCCN | DIP | DIP | DIP |
Encapsulate equivalent code | LCC32,.45X.55 | DIP28,.6 | LCC32,.45X.55 | LCC32,.45X.55 | LCC32,.45X.55 | DIP28,.6 | DIP28,.6 | DIP28,.6 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE |
page size | 32 words | 32 words | 32 words | 32 words | 32 words | 32 words | 32 words | 32 words |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Programming voltage | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
ready/busy | YES | YES | YES | YES | YES | YES | YES | YES |
Filter level | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
Maximum seat height | 2.54 mm | 4.445 mm | 2.54 mm | 2.54 mm | 2.54 mm | 4.445 mm | 4.445 mm | 4.445 mm |
Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | YES | NO | YES | YES | YES | NO | NO | NO |
technology | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS |
Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal pitch | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm |
Terminal location | QUAD | DUAL | QUAD | QUAD | QUAD | DUAL | DUAL | DUAL |
switch bit | NO | NO | NO | NO | NO | NO | NO | NO |
width | 11.43 mm | 15.24 mm | 11.43 mm | 11.43 mm | 11.43 mm | 15.24 mm | 15.24 mm | 15.24 mm |
Maximum write cycle time (tWC) | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms |
Maker | - | AMD | AMD | AMD | AMD | AMD | AMD | AMD |