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M29W640GT70NB6E

Description
4M X 16 FLASH 3V PROM, 70 ns, PDSO48
Categorystorage    storage   
File Size2MB,90 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
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M29W640GT70NB6E Overview

4M X 16 FLASH 3V PROM, 70 ns, PDSO48

M29W640GT70NB6E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTSOP
package instructionTSSOP, TSSOP56,.8,20
Contacts56
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time70 ns
Other featuresTOP BOOT BLOCK
Spare memory width8
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G56
length18.4 mm
memory density67108864 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,127
Number of terminals56
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP56,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size4/8 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size8K,64K
Maximum standby current0.0001 A
Maximum slew rate0.01 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width14 mm
Base Number Matches1
M29W640GH M29W640GL
M29W640GT M29W640GB
64 Mbit (8Mb x8 or 4Mb x16, Page)
3V supply Flash memory
Feature
Supply Voltage
– V
CC
= 2.7 to 3.6 V for Program/Erase/Read
– V
PP
=12 V for Fast Program (optional)
Asynchronous Random/Page Read
– Page Width: 4 words
– Page Access: 25 ns
– Random Access: 60 ns, 70 ns, 90 ns
Fast Program commands
– 2 word/4 byte Program (without V
PP
=12 V)
– 4 word/8 byte Program (with V
PP
=12 V)
– 16 word/32 byte Write Buffer
Programming time
– 10 µs per byte/word typical
– Chip Program time: 10 s (4-word Program)
Memory organization
– M29W640GH/L:
128 main blocks, 64 Kbytes each
– M29W640GT/B
Eight 8 Kbytes Boot blocks (top or bottom)
127 Main blocks, 64 Kbytes each
Program/Erase controller
– Embedded byte/word program algorithms
Program/Erase Suspend and Resume
– Read from any block during Program
Suspend
– Read and Program another block during
Erase Suspend
ECOPACK
®
packages
Device summary
Root Part Number
M29W640GH: Uniform, last block protected by V
PP
/WP
M29W640GL: Uniform, first block protected by V
PP
/WP
M29W640GT: Top Boot Blocks
M29W640GB: Bottom Boot Blocks
FBGA
TSOP48 (NA)
12 x 20mm
TFBGA48 (ZA)
6 x 8mm
FBGA
TSOP56 (NB)
)
14 x 20mm(1
TBGA64 (ZF)
10 x 13mm(1)
1. Packages only available upon request.
128 word Extended Memory block
– Extra block used as security block or to
store additional information
Low power consumption:Standby and
Automatic Standby
Unlock Bypass Program command
– Faster Production/Batch Programming
Common Flash Interface: 64-bit Security Code
V
PP
/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
100,000 Program/Erase cycles per block
Electronic Signature
– Manufacturer Code: 0020h
– Device code (see
Table 1)
Table 1.
Device code
227Eh + 220Ch + 2201h
227Eh + 220Ch + 2200h
227Eh + 2210h + 2201h
227Eh + 2210h + 2200h
March 2008
Rev 5
1/90
www.numonyx.com
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