EEWORLDEEWORLDEEWORLD

Part Number

Search

CLC501AID

Description
Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, CDIP8,
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size396KB,4 Pages
ManufacturerComlinear Corporation
Download Datasheet Parametric Compare View All

CLC501AID Overview

Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, CDIP8,

CLC501AID Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
Amplifier typeOPERATIONAL AMPLIFIER
ArchitectureCURRENT-FEEDBACK
Maximum average bias current (IIB)30 µA
Maximum bias current (IIB) at 25C30 µA
Minimum Common Mode Rejection Ratio60 dB
Nominal Common Mode Rejection Ratio70 dB
frequency compensationYES
Maximum input offset voltage3000 µV
JESD-30 codeR-CDIP-T8
JESD-609 codee0
low-dissonanceNO
Negative supply voltage upper limit-7 V
Nominal Negative Supply Voltage (Vsup)-5 V
Number of functions1
Number of terminals8
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply+-5 V
Certification statusNot Qualified
minimum slew rate800 V/us
Nominal slew rate1200 V/us
Maximum slew rate24 mA
Supply voltage upper limit7 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyBIPOLAR
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Minimum voltage gain1
broadbandYES
Base Number Matches1

CLC501AID Related Products

CLC501AID CLC501AJP CLC501AJE
Description Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, CDIP8, Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, PDIP8, Operational Amplifier, 1 Func, 3000uV Offset-Max, BIPolar, PDSO8,
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown
Amplifier type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture CURRENT-FEEDBACK CURRENT-FEEDBACK CURRENT-FEEDBACK
Maximum average bias current (IIB) 30 µA 30 µA 30 µA
Maximum bias current (IIB) at 25C 30 µA 30 µA 30 µA
Minimum Common Mode Rejection Ratio 60 dB 60 dB 60 dB
Nominal Common Mode Rejection Ratio 70 dB 70 dB 70 dB
frequency compensation YES YES YES
Maximum input offset voltage 3000 µV 3000 µV 3000 µV
JESD-30 code R-CDIP-T8 R-PDIP-T8 R-PDSO-G8
JESD-609 code e0 e0 e0
low-dissonance NO NO NO
Negative supply voltage upper limit -7 V -7 V -7 V
Nominal Negative Supply Voltage (Vsup) -5 V -5 V -5 V
Number of functions 1 1 1
Number of terminals 8 8 8
Maximum operating temperature 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Package body material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP SOP
Encapsulate equivalent code DIP8,.3 DIP8,.3 SOP8,.25
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply +-5 V +-5 V +-5 V
Certification status Not Qualified Not Qualified Not Qualified
minimum slew rate 800 V/us 800 V/us 800 V/us
Nominal slew rate 1200 V/us 1200 V/us 1200 V/us
Maximum slew rate 24 mA 24 mA 24 mA
Supply voltage upper limit 7 V 7 V 7 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount NO NO YES
technology BIPOLAR BIPOLAR BIPOLAR
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal pitch 2.54 mm 2.54 mm 1.27 mm
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Minimum voltage gain 1 1 1
broadband YES YES YES
Base Number Matches 1 1 1
package instruction - DIP, DIP8,.3 SOP, SOP8,.25
NXP Rapid IoT Review] +⑥NXP Rapid IoT self-exploration program, review summary and impressions
[i=s]This post was last edited by yin_wu_qing on 2019-1-20 14:18[/i] [size=4] [font=Tahoma] The NXP Rapid IoT evaluation is coming to an end. Recalling the original idea of the application, the origin...
yin_wu_qing RF/Wirelessly
RF Circuit PCB Design Processing Techniques
[i=s] This post was last edited by Eason爱RF on 2022-4-22 13:50[/i]How to weigh the pros and cons to find a suitable compromise point in the PCB design process, reduce these interferences as much as po...
Eason爱RF TI Technology Forum
RSL10-002GEVB Plant Manager Node Design
[i=s]This post was last edited by dql2016 on 2021-7-17 17:18[/i]In this project, there is a plant manager function node. As the name suggests, the plant manager can help you automatically take care of...
dql2016 onsemi and Avnet IoT Innovation Design Competition
Development environment preparation
I am very happy to be selected for the evaluation activity of the GD32E231 development board. I have the opportunity to experience the strength of domestic MCU. Go to the official website of the compe...
xjzh GD32 MCU
Random notes small total small picture signal reflection picture
Discontinuities in transmission lines often cause reflections, which create new signals that can interfere with and distort the desired signal....
btty038 RF/Wirelessly
Basic knowledge of radome structure
Important note: The development and construction of radomes are complex. The data mentioned in the article are only approximate values. This information can only be used as a preliminary understanding...
Jacktang Wireless Connectivity

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号