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UF5408

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size56KB,2 Pages
ManufacturerDAESAN
Websitehttp://www.diodelink.com
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UF5408 Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD

UF5400 THRU UF5408
Features
· Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
· Low forward voltage drop
· High current capability
· High reliability
· Low power loss, high effciency
· High surge current capability
· High speed switching
· Low leakage
CURRENT 3.0 Amperes
VOLTAGE 50 to 1000 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
· Epoxy : UL94V-0 rate flame retardant
· Lead : Plated axial lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.042 ounce, 1.19 gram
0.375(9.5)
0.285(7.2)
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length at T
A
=50℃
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 3.0A
Maximum DC reverse current at rated DC
blocking voltage
Maximum full load reverse current full cycle
average. 0.375"(9.5mm) lead length at
T
L
=55℃
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Operating junction and storage
temperature range
I
R
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
UF
5400
50
35
50
UF
UF
5401 5402
100
70
100
200
140
200
UF
5403
300
210
300
UF
5404
400
280
400
3.0
UF
5406
600
420
600
UF
UF
5407 5408
800
560
800
1000
700
1000
Units
Volts
Volts
Volts
Amps
200.0
1.0
1.3
10.0
150.0
1.7
Amps
Volts
μA
150
Trr
C
J
T
J
T
STG
50
70
-65 to +150
70
50
ns
pF
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

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