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US1K

Description
1 A, 800 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size60KB,2 Pages
ManufacturerMIC
Websitehttp://www.cnmic.com/
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US1K Overview

1 A, 800 V, SILICON, SIGNAL DIODE

SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
US1A THRU US1M
FEATURES
VOLTAGE RANGE
CURRENT
50 to 1000 Volts
1.0 Ampere
DO-214AC(SMA)
Plastic package has underwrites laboratory flammability
Classification 94V-0
Built-in strain relief, ideal for automated placement
Glass passivated chip junction
Fast switching for high efficiency
High temperature soldering
260℃/10 second
MECHANICAL DATA
Case: JEDED DO-214AC molded plastic over
glass passivated chip
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026
Polarity: Color band denotes cathode end
Weight: 0.002ounce, 0.064 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
SYMBOLS US1A US1B
Maximum Repetitive Peak Reverse Voltage
V
RRM
50
100
Maximum RMS Voltage
V
RMS
35
70
Maximum DC Blocking Voltage
V
DC
50
100
Maximum Average Forward Rectified Current
At T
A
=55℃
Peak Forward Surge Current
8.3ms single half sine wave superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage per at 1.0A
Maximum DC Reverse Current at rated T
A
= 25℃
DC Blocking Voltage
T
A
= 125℃
Typical Reverse Recovery Time Test conditions
I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Typical Junction Capacitance
(Measured at 1.0MHz and applied reverse voltage of 4.0V)
Typical Thermal Resistance (Note 1)
Operating Junction Temperature
Storage Temperature Range
US1D
200
140
200
US1G
400
280
400
1.0
30
US1J
600
420
600
US1K
800
560
800
US1M
1000
700
1000
UNIT
Volts
Volts
Volts
Amps
Amps
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
R
θJL
T
J
T
STG
50
20
1.0
1.30
5.0
100
1.70
Volts
µA
100
15
88
28
(-55 to +150)
(-55 to +150)
nS
pF
/W
Notes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted on
P.C.B. with 0.2×0.2″(5.0
×
5.0mm) copper pad areas.
E-mail:
sales@cnmic.com
Web Site: www.cnmic.com

US1K Related Products

US1K US1A US1D US1G US1M US1J
Description 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 1000 V, SILICON, SIGNAL DIODE SIGNAL DIODE

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