US2AB thru US2MB
SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS
ULTRA FAST RECTIFIERS FORWARD CURRENT - 2.0 AMPERES
SMB/DO-214AA
.075(1.91)
.083(2.11)
.130(3.30)
.155(3.94)
.160(4.06)
.185(4.70)
.006(.152)
.012(.305)
.083(2.13)
.096(2.44)
.030(0.76)
.050(1.27)
.004(.102)
.008(.203)
.200(5.08)
.220(5.59)
Dimensions in inches and (millimeters)
FEATURES
Glass passivated chip
Ultra fast switching for high efflciency
For surface mount applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material UL flammability classification 94V-0
High temperature soldering 260
o
C/10seconds at terminals
Pb free product are available 99% Sn above can meet RoHS
Environment substance directive request
MECHANICAL DATA
Case JEDEC DO-214AA molded plastic
Case Molded plastic
Polarity Indicated by cathode band
Weight 0.003 ounce, 0.093grams
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%
SYMBOL US2AB US2BB US2DB US2GB US2JB US2KB US2MB
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current @ T
L
=75 C
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 2.0A DC
Maximum DC Reverse Current @T
J
=25
0
C
at Rated DC Blocking Voltage @T
J
=100
0
C
Maximum Reverse Recovery Time (NOTE 1)
Typical Junction Capacitance (NOTE 2)
Typical Thermal Resistance (NOTE 3)
Operating Temperature Rang
Storage Temperature Range
R
0
UNITS
Volts
Volts
Volts
Amps
Amps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
C
J
JL
50
35
50
100
70
100
200
140
200
400
280
400
2.0
50
600
420
600
800
560
800
1000
700
1000
1.0
1.3
10
100
50
20
30
1.5
1.7
Volts
A
75
10
0
nS
pF
C/W
0
T
J
T
STG
-55 to +150
-55 to +150
C
C
0
NOTES
1. Rverse Recovery Test Condibons I
F
= 0.5A, I
R
= 1A, l
RR
= 0.25A
2. Measured at 1 MHz and applied reverse Voltag of 4.0VDC
3. Thermal Resistance Junction to lead
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US2AB thru US2MB
SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS
RATINGS AND CHARACTERISTIC CURVES US2AB THRU US2MB
Fig. 2 - TYPICAL FORWARD CHARACTERISTICS
PER ELEMENT
10
INSTANTANEOUS FORWARD CURRENT,
AMPERES
US2AB
US2GB
TJ=25
0
C
Pulse Width=300 s
2% Duly Cycle
Fig. 1 - DERATING CURVE FOR
OUTPUT RECTIFIED CURRENT
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
2.4
2.0
1.6
1.2
0.8
0.4
0
0
20
40
60
80
100 120
o
US2MB
1.0
SINGLE PHASE
HALF W AVE
60H
Z
RESISTIVE OR
INDUCTIVE LOAD
P.C.B MOUNTED
ON 0.3x0.3"(8.0x8.0mm)
COPPER PAD AREAS
0.1
140 160
0.01
0.4
0.4
0.8
1.0
1.2
1.4
LEAD TEMPERATURE, C
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig. 4 - TYPICAL REVERSE CHARACTERISTICS
Fig. 3 - MAXIMUM FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
INSTANTANEOUS REVERSE
CURRENT MICROAMPERES
60
50
40
30
20
10
0.01
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
8.3ms SINGLE HALF SINCE-WAVE
JEDEC METHOD
10
1.0
0.1
TJ=25
0
C
20
40
60
80
100
120
140
PERCENT OF RATED PEAK
REVERSE VOLTAGE
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
100
Fig. 6 - REVERSE RECOVERY TIME CHARACTERISTIC
AND TEST CIRCUIT DIAGRAM
50
Noninductive
10
Noninductive
trr
+0.5A
( )
PULSE
GENERATOR
NOTE 2
CAPACITANCE, pF
(+)
25 Vdc
(approx)
( )
D.U.T.
0
-0.25
10
5
TJ=25 C
f=1.0MHz
Vsig=50mVp-p
0
1
NON-
Inductive
OSCILLOSCOPE
NOTE 1
(+)
1.0
10
REVERSE VOLTAGE, VOLTS
100
NOTES:1. Rise Time=7ns max.
Input Impedance=1 megohm. 22pF
2. Rise Time=10ns max.
Source Impedance=50 Ohms.
-1.0
SET TIME
BASE FOR
10ns/cm
1cm
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