Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Integrated Silicon Solution ( ISSI ) |
| package instruction | SOP, TSOP54,.46,32 |
| Reach Compliance Code | compliant |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 5 ns |
| Other features | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 166 MHz |
| I/O type | COMMON |
| interleaved burst length | 1,2,4,8 |
| JESD-30 code | R-PDSO-G54 |
| JESD-609 code | e3 |
| memory density | 67108864 bit |
| Memory IC Type | SYNCHRONOUS DRAM |
| memory width | 16 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 54 |
| word count | 4194304 words |
| character code | 4000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 4MX16 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | SOP |
| Encapsulate equivalent code | TSOP54,.46,32 |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| power supply | 3.3 V |
| Certification status | Not Qualified |
| refresh cycle | 4096 |
| self refresh | YES |
| Continuous burst length | 1,2,4,8,FP |
| Maximum standby current | 0.001 A |
| Maximum slew rate | 0.15 mA |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Matte Tin (Sn) - annealed |
| Terminal form | GULL WING |
| Terminal pitch | 0.8 mm |
| Terminal location | DUAL |
| Base Number Matches | 1 |
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