KSA1015 — PNP Epitaxial Silicon Transistor
January 2014
KSA1015
PNP Epitaxial Silicon Transistor
Features
• Low-Frequency Amplifier
• Collector-Base Voltage: V
CBO
= -50 V
• Complement to KSC1815
1
TO-92
1. Emitter 2. Collector 3. Base
Ordering Information
Part Number
KSA1015GRTA
KSA1015YTA
Marking
A1015
A1015
Package
TO-92 3L
TO-92 3L
Packing Method
Ammo
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Junction Temperature
Storage Temperature Range
Parameter
Value
-50
-50
-5
-150
-50
150
-55 to 150
Unit
V
V
V
mA
mA
°C
°C
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.1.2
www.fairchildsemi.com
1
KSA1015 — PNP Epitaxial Silicon Transistor
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Total Device Dissipation
Derate Above 25°C
Parameter
Max.
400
3.2
312
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
Note:
1. PCB size: FR-4 76 x 114 x 1.57 mm
3
(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
1
h
FE
2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Conditions
I
C
= -100
μA,
I
E
= 0
I
C
= -10 mA, I
B
= 0
I
E
= -10
μA,
I
C
= 0
V
CB
= -50 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -6 V, I
C
= -2 mA
V
CE
= -6 V, I
C
= -150 mA
I
C
= -100 mA, I
B
= -10 mA
I
C
= -100 mA, I
B
= -10 mA
V
CE
= -10 V, I
C
= -1 mA
V
CB
= -10 V, I
E
= 0,
f = 1 MHz
V
CE
= -6 V, I
C
= -0.1 mA,
f = 100 Hz, R
G
= 10 kΩ
Min.
-50
-50
-5
Typ. Max.
Unit
V
V
V
-0.1
-0.1
70
25
-0.1
80
4
0.5
7
6
-0.3
-1.1
400
μA
μA
V
V
MHz
pF
dB
h
FE
Classification
Classification
h
FE
1
O
70 ~ 140
Y
120 ~ 240
GR
200 ~ 400
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.1.2
www.fairchildsemi.com
2
KSA1015 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
1000
-50
-45
I
C
[mA], COLLECTOR CURRENT
I
B
= -400
μ
A
I
B
= -350
μ
A
I
B
= -300
μ
A
I
B
= -250
μ
A
I
B
= -200
μ
A
I
B
= -150
μ
A
I
B
= -100
μ
A
I
B
= -50
μ
A
V
CE
= -6V
-40
-35
-30
-25
-20
-15
-10
-5
0
0
-2
-4
-6
-8
h
FE
, DC CURRENT GAIN
100
10
-10
-12
-14
-16
-18
-20
1
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
V
BE
(sat)[V], V
CE
(sat)[V], SATURATION VOLTAGE
Figure 2. DC Current Gain
-10
-100
I
C
=10I
B
V
CE
=-6V
I
C
[mA], COLLECTOR CURRENT
-1
V
BE
(sat)
-10
-0.1
V
CE
(sat)
-1
-0.01
-0.1
-1
-10
-100
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
(sat)[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
f=1MHz
I
E
=0
V
CE
=-6V
C
ob
[pF], CAPACITANCE
10
h
FE
, DC CURRENT GAIN
1
-1
-10
-100
100
10
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.1.2
www.fairchildsemi.com
3
KSA1015 — PNP Epitaxial Silicon Transistor
Physical Dimensions
TO-92 3L (Ammo)
Figure 7. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
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obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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© 2002 Fairchild Semiconductor Corporation
KSA1015 Rev. 1.1.2
www.fairchildsemi.com
4
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Rev. I66
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