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S71NS064JA0BAW003

Description
Memory Circuit, Flash+PSRAM, CMOS, PBGA44
Categorystorage    storage   
File Size546KB,24 Pages
ManufacturerAMD
Websitehttp://www.amd.com
Environmental Compliance
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S71NS064JA0BAW003 Overview

Memory Circuit, Flash+PSRAM, CMOS, PBGA44

S71NS064JA0BAW003 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFBGA, BGA44,8X14,20
Reach Compliance Codecompliant
Maximum access time87.5 ns
JESD-30 codeR-PBGA-B44
Memory IC TypeMEMORY CIRCUIT
Mixed memory typesFLASH+PSRAM
Number of terminals44
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA44,8X14,20
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
Maximum standby current0.00006 A
Maximum slew rate0.025 mA
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
Base Number Matches1
S71NS128JA0/S71NS064JA0
Stacked Multi-Chip Product (MCP)
128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit),
110 nm CMOS 1.8 Volt-only Simultaneous Read/Write,
Burst Mode Flash Memories with
16 Megabit (1M x 16-Bit) pSRAM
Data Sheet
ADVANCE INFORMATION
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Publication Number
31136_00
Revision
A
Amendment
4
Issue Date
March 21, 2005
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