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SC275H150S5P

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 150V V(RRM), Silicon, WAFER
CategoryDiscrete semiconductor    diode   
File Size140KB,5 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

SC275H150S5P Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 150V V(RRM), Silicon, WAFER

SC275H150S5P Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeWAFER
package instructionO-XUUC-N
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XUUC-N
JESD-609 codee0
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin I0118J 07/00
SC275.....5. Series
SCHOTTKY DIE 275 x 275 mils
a
c
0.35 ± 0.01
(0.14 ± 0.0004)
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS
(INCHES).
D
b
d
C
A
2. CONTROLLING DIMENSION: (INCH).
3. DIMENSIONS AND TOLERANCES:
a = 6.98 + 0, - 0.05
(0.27 + 0, - 0.002)
b = 6.98 + 0, - 0.05
(0.27 + 0, - 0.002)
c = 6.48 + 0, - 0.003
(0.25 + 0, - 0.0001)
d = 6.48 + 0, - 0.003
(0.25 + 0, - 0.0001)
Ø = 0.7 ± 0.1
(0.03 ± 0.004)
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
D = Reject Ink Dot (only on non-conforming dies)
5. SAWING:
Recommended Blade
SEMITEC S1025 QS00 Blade
Ø
40 (1.57)
Wafer flat alligned with
side b of the die
Ø 125 (4.92)
NOT TO SCALE
NOTE:
10 mils die thickness is available on specific request only.
Contact factory for information.
www.irf.com
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