Si9936DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.050 @ V
GS
= 10 V
0.080 @ V
GS
= 4.5 V
I
D
(A)
"5.0
"3.9
D
1
D
1
D
2
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
"5.0
"4.0
"40
1.7
2
Unit
V
A
W
1.3
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
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Document Number: 70128
S-00652—Rev. H, 27-Mar-00
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Symbol
R
thJA
Limit
62.5
Unit
_C/W
1
Si9936DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.0 A
V
GS
= 4.5 V, I
D
= 3.9 A
V
DS
= 15 V, I
D
= 5.0 A
I
S
=1.7 A, V
GS
= 0 V
40
0.039
0.052
10
0.72
1.2
0.050
0.080
1
"100
2
20
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 5.0 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
V,
I
D
^
1 A, V
GEN
= 10 V R
G
= 6
W
A
V,
V
DS
= 15 V, V
GS
= 10 V I
D
= 5.0
Ω
V
V,
50
13.5
1.9
3
11
9
25
10
60
30
25
50
50
160
ns
35
nC
C
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
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Document Number: 70128
S-00652—Rev. H, 27-Mar-00
Si9936DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V
GS
= 10 –6 V
5V
32
30
I
D
– Drain Current (A)
I
D
– Drain Current (A)
24
25_C
125_C
40
T
C
= –55_C
Transfer Characteristics
20
4V
16
10
3V
0
0
2
4
6
8
10
8
0
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
1400
1200
r
DS(on)
– On-Resistance (
Ω
)
0.16
C – Capacitance (pF)
1000
800
600
400
200
0
0
5
10
15
20
25
30
I
D
– Drain Current (A)
0
0
5
Capacitance
0.12
V
GS
= 4.5 V
C
iss
0.08
V
GS
= 10 V
0.04
C
oss
C
rss
10
15
20
25
30
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 5 A
8
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
1.6
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 5 A
6
1.2
4
0.8
2
0.4
0
0
3
6
9
12
Q
g
– Total Gate Charge (nC)
15
0
–50
–25
0
25
50
75
100
T
J
– Junction Temperature (_C)
125
150
Document Number: 70128
S-00652—Rev. H, 27-Mar-00
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Si9936DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
0.4
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
– On-Resistance (
Ω
)
I
S
– Source Current (A)
T
J
= 150_C
0.3
10
T
J
= 25_C
0.2
0.1
I
D
= 5 A
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
40
35
I
D
= 250
µA
–0.0
Power (W)
25
20
15
10
–0.6
5
–0.8
–50
0
–25
0
25
50
75
100
125
150
0.01
30
Single Pulse Power
0.2
V
GS(th)
Variance (V)
–0.2
–0.4
0.1
1
Time (sec)
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70128
S-00652—Rev. H, 27-Mar-00
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Document Number: 91000
Revision: 18-Jul-08
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