BL
GALAXY ELECTRICAL
V
Z
:
GZF3V6C---GZF91C
3.6 -- 91 V
800 mW
POWER DISSIPATION:
ZENER DIODES
FEATURES
◇
Silicon planar power zener diodes.
◇
Low leakage current
◇
Low profile surface mount package.
260℃/10 sec.at terminals.
SOD-123FL
Cathode Band
Top View
2.8
±
0.1
1.4± 0.15
0.10-0.30
0.6
±
0.25
3.7
±
0.2
MECHANICAL DATA
◇
Case:JEDEC SOD-123FL,molded plastic
◇
Terminals: Solderable per MIL-
STD-202,Method 208
◇
Polarity: Color band denotes cathods end
◇
Weight: 0.006 ounces, 0.02 grams
◇
Mounting position: any
Dimensions in millimeters
Maximum Ratings and Thermal Characteristics
Parameter
Power dissipation at T
A
=25℃ (Note 1)
Forward voltage @I
F
=200mA
Maximum thermal resistance
junction to ambient
Junction temperature
Storage temperature range
1）
(T
A
=25℃ unless otherwise noted)
Symbol
P
tot
V
F
R
θJA
T
J
T
STG
Value
800
1.2
180
-55 to +150
-55 to +150
1.0
±
0.2
1.9± 0.1
◇
High temperature soldering:
Unit
mW
V
K/W
℃
℃
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Mounted on epoxy glass PCB with 3×3mm,Cu pads(≥40µm thick)
Document Number 0284036
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 --
TYPICAL FORWARD CHARACTERISTIC
GZF3V6C - - - GZF91C
10
mA
3
10
2
10
IF
1
10
10
-1
TJ = 100 °C
TJ = 25 °C
-2
10
-3
10
10
-4
-5
0
0.2
0.4
0.6
VF
0.8
1V
FIG.2 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
mW
800
P
tot 600
400
200
0
100
Tamb
200 °C
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Document Number 0284036
BL
GALAXY ELECTRICAL
3.
Renesas Electronics MCUs
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