Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compliant |
Avalanche Energy Efficiency Rating (Eas) | 2500 mJ |
Shell connection | ISOLATED |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 600 V |
Maximum drain current (ID) | 38 A |
Maximum drain-source on-resistance | 0.15 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-264AA |
JESD-30 code | R-PSFM-T3 |
JESD-609 code | e1 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 152 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |