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MMBT1616A

Description
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 60V; IC (A): 1A; HFE Min: 135; HFE Max: 400; VCE (V): 2V; IC (mA): 100mA; VCE(SAT) (V): 0.3V; IC (mA)1: 1000mA; IB (mA): 50mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.35W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23
CategoryDiscrete semiconductor    The transistor   
File Size425KB,4 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric View All

MMBT1616A Overview

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 60V; IC (A): 1A; HFE Min: 135; HFE Max: 400; VCE (V): 2V; IC (mA): 100mA; VCE(SAT) (V): 0.3V; IC (mA)1: 1000mA; IB (mA): 50mA; FT Min (MHz): 100 MHz; PTM Max (W): 0.35W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23

MMBT1616A Parametric

Parameter NameAttribute value
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)81
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
Audio frequency power amplifier.
Medium speed switching.
MMBT1616A
Pb
Lead-free
APPLICATIONS
General purpose application,switching application.
SOT-23
ORDERING INFORMATION
Type No.
MMBT1616A
Marking
16A
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
120
60
6
1000
350
-55 to +150
Unit
V
V
V
mA
mW
C070
Rev.A
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