SML30M70BVR datasheet, PDF - EEWORLD Datasheet

SML30M70BVR: DescriptionPower Field-Effect Transistor, 48A I(D), 300V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247; CategoryDiscrete semiconductor The transistor; File Size98KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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SML30M70BVR Overview

Power Field-Effect Transistor, 48A I(D), 300V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	1300 mJ
Configuration	SINGLE
Minimum drain-source breakdown voltage	300 V
Maximum drain current (ID)	48 A
Maximum drain-source on-resistance	0.07 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247
JESD-30 code	R-PSFM-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	192 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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