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BSX62SMD-JQRR4

Description
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size10KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

BSX62SMD-JQRR4 Overview

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN

BSX62SMD-JQRR4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionHERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-276AB
JESD-30 codeR-CBCC-N3
JESD-609 codee4
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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