EEWORLDEEWORLDEEWORLD

Part Number

Search

CMAD4448

Description
0.25 A, 120 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size142KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CMAD4448 Overview

0.25 A, 120 V, SILICON, SIGNAL DIODE

CMAD4448 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
applicationEFFICIENCY
Minimum breakdown voltage120 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current4 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage120 V
Maximum reverse current0.5 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage100 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
CMAD4448
SURFACE MOUNT
SILICON ULTRA HIGH SPEED
SWITCHING DIODE
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMAD4448
is an ultra high speed switching diode ideal for
applications where very small size and operational
efficiency are prime requirements.
MARKING CODE: M
SOD-923 CASE
APPLICATIONS:
DC / DC Converters
Voltage Clamping
Protection Circuits
Battery powered applications including
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 ms
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
FEATURES:
Current (IO=250mA)
Forward Voltage Drop (VF=0.91V TYP @ 100mA)
Extremely Fast Switching Speed (4ns Max)
Miniture, 0.8 x 0.6 x 0.4mm, ultra low height profile
TM
FEMTOmini
Surface Mount Package.
SYMBOL
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
Θ
JA
120
250
500
4.0
1.0
100
-65 to +150
1250
UNITS
V
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
BVR
IR
IR
IR
VF
VF
VF
CT
trr
IR=100µA
VR=50V
VR=50V, TA=125°C
VR=100V
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f=1 MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
0.55
0.67
0.85
120
TYP
150
MAX
UNITS
V
300
100
500
0.59
0.72
0.91
0.65
0.77
1.0
2.0
2.0
4.0
nA
µA
nA
V
V
V
pF
ns
R0 (20-April 2007)

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号