2N7002L
Preferred Device
Small Signal MOSFET
60 V, 115 mA
N−Channel SOT−23
Features
http://onsemi.com
V
(BR)DSS
R
DS(on)
MAX
7.5 mW @ 10 V,
500 mA
I
D
MAX
•
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage (R
GS
= 1.0 MW)
Drain Current
− Continuous T
C
= 25°C (Note 1)
− Continuous
T
C
= 100°C (Note 1)
− Pulsed (Note 2)
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤
50
ms)
Symbol
V
DSS
V
DGR
I
D
I
D
I
DM
Value
60
60
±
115
±
75
±
800
Unit
Vdc
Vdc
mAdc
N−Channel
3
60 V
115 mA
V
GS
V
GSM
±
20
±
40
Vdc
Vpk
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 3) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
°C/W
°C
Unit
mW
mW/°C
°C/W
mW
mW/°C
1
2
3
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
R
qJA
P
D
SOT−23
CASE 318
STYLE 21
702
W
1
2
Gate
702
W
Source
= Device Code
= Work Week
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
2N7002LT1
2N7002LT3
2N7002LT1G
2N7002LT3G
SOT−23
(Pb−free)
Package
SOT−23
Shipping
†
3000 Tape & Reel
10,000 Tape & Reel
3000 Tape & Reel
10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2003
1
December, 2003 − Rev. 1
Publication Order Number:
2N7002L/D
2N7002L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 10
mAdc)
Zero Gate Voltage Drain Current
(V
GS
= 0, V
DS
= 60 Vdc)
Gate−Body Leakage Current, Forward
(V
GS
= 20 Vdc)
Gate−Body Leakage Current, Reverse
(V
GS
= − 20 Vdc)
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
mAdc)
On−State Drain Current
(V
DS
≥
2.0 V
DS(on)
, V
GS
= 10 Vdc)
Static Drain−Source On−State Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
Static Drain−Source On−State Resistance
(V
GS
= 10 V, I
D
= 500 mAdc)
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
Forward Transconductance
(V
DS
≥
2.0 V
DS(on)
, I
D
= 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Turn−Off Delay Time
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
(I
S
= 11.5 mAdc, V
GS
= 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
V
SD
I
S
I
SM
−
−
−
−
−
−
−1.5
−115
−800
Vdc
mAdc
mAdc
(V
DD
= 25 Vdc, I
D
^
500 mAdc,
R
G
= 25
W,
R
L
= 50
W,
V
gen
= 10 V)
t
d(on)
t
d(off)
−
−
−
−
20
40
ns
ns
C
iss
C
oss
C
rss
−
−
−
−
−
−
50
25
5.0
pF
pF
pF
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
g
FS
V
GS(th)
I
D(on)
V
DS(on)
−
−
r
DS(on)
−
−
−
−
80
−
−
−
−
−
7.5
13.5
7.5
13.5
−
mmhos
−
−
3.75
0.375
Ohms
1.0
500
−
−
2.5
−
Vdc
mA
Vdc
T
J
= 25°C
T
J
= 125°C
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
60
−
−
−
−
−
−
−
−
−
−
1.0
500
100
−100
Vdc
mAdc
nAdc
nAdc
Symbol
Min
Typ
Max
Unit
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2
2N7002L
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8
I D, DRAIN CURRENT (AMPS)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
T
A
= 25°C
I D, DRAIN CURRENT (AMPS)
V
GS
= 10 V
9V
8V
7V
6V
5V
4V
3V
9.0
10
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
0.8
0.6
0.4
0.2
1.0
V
DS
= 10 V
−55
°C
125°C
25°C
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
r DS(on) , STATIC DRAIN−SOURCE ON−RESISTANCE
(NORMALIZED)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−60
−20
+20
+60
T, TEMPERATURE (°C)
+100
+140
V
GS
= 10 V
I
D
= 200 mA
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
2.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
−60
−20
+20
+60
T, TEMPERATURE (°C)
+100
+140
V
DS
= V
GS
I
D
= 1.0 mA
Figure 3. Temperature versus Static
Drain−Source On−Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
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3
2N7002L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
A
L
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
B S
V
G
C
D
H
K
J
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Figure 5. SOT−23
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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2N7002L/D
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