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BZW04P7V8B

Description
Trans Voltage Suppressor Diode, 7.78V V(RWM), Bidirectional,
CategoryDiscrete semiconductor    diode   
File Size317KB,4 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric View All

BZW04P7V8B Overview

Trans Voltage Suppressor Diode, 7.78V V(RWM), Bidirectional,

BZW04P7V8B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
Breakdown voltage nominal value9.325 V
Maximum clamping voltage13.4 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage7.78 V
surface mountNO
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
BZW04P-5V8 --- BZW04-376
BREAKDOWN VOLTAGE: 5.8 --- 376 V
PEAK PULSE POWER: 400 W
TRANSIENT VOLTAGE SUPPRESSOR
Plastic package
has
underwriters laboratory
flam
mability
classification
94V-0
Glass passivated junction
400W peak pulse power capability with a 10/1000μs
waveform, repetition rate (duty cycle): 0.01%
Excellent clam ping capability
Fast response tim e: typically less than 1.0ps from 0 Volts to
V
(BR)
for uni-directional and 5.0ns for bi-directional types
Devices with V
(BR)
10V I
D
are typically I
D
less than 1.0
μA
High temperature soldering guaranteed:265 / 10 seconds,
0.375"(9.5mm) lead length, 5lbs. (2.3kg) tension
DO-41
MECHANICAL DATA
Case:JEDEC DO--41, molded plastic body over
passivated junction
Term inals:
axial
leads, solderable per MIL-STD-750,
m ethod 2026
Polarity:
foruni-directional
types the color band denotes
the cathode, which is postitive with respect to the
anode under normal TVS operation
Weight: 0.012 ounces, 0.34 gram s
Mounting position:
any
Dimensions in millimeters
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use add suffix letter "B" (e.g. BZW04P-6V4B).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25
ambient tem perature unless otherwise specified.
SYMBOL
Peak
pow
er
dissipation
w ith a 10/1000μs w aveform (NOTE 1, FIG.1)
Peak
pulse current
w ith a 10/1000μs w aveform (NOTE 1)
Steady
state pow
er
dissipation
at T
L
=75
fffffLead
lengths
0.375"(9.5mm) (NOTE 2)
Peak
forw
ard
surge current,
8.3ms
single
half
ffffSine-wave
superimposed
on
rated load
(JEDEC Method) (NOTE 3)
Maximum
instantaneous forw
ard
voltage
at 25A for unidirectional only (NOTE 4)
Operating
junction
and
storage temperature range
VALUE
Minimum 400
See
table
1
1.0
40.0
3.5/6.5
-55---+150
UNIT
W
A
W
A
V
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T
A
=25 per Fig. 2
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm
2
) per Fig. 5
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum
(4) V
F
=3.5 Volt max. for devices of V
(BR)
220V, and V
F
=5.0 Volt max. for devices of V
(BR)
>220V
www.galaxycn.com
Document Number
1785007
BL
GALAXY ELECTRICAL
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