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EBD26UB8ALFA-75

Description
256MB Unbuffered DDR SDRAM DIMM
Categorystorage    storage   
File Size159KB,16 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Download Datasheet Parametric Compare View All

EBD26UB8ALFA-75 Overview

256MB Unbuffered DDR SDRAM DIMM

EBD26UB8ALFA-75 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerELPIDA
Parts packaging codeDIMM
package instructionDIMM, DIMM184
Contacts184
Reach Compliance Codeunknown
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
memory density2147483648 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals184
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)225
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
PRELIMINARY DATA SHEET
256MB Unbuffered DDR SDRAM DIMM
EBD26UB8ALFA
(32M words
×
64 bits, 2 Banks)
Description
The EBD26UB8ALFA is 32M words
×
64 bits, 2 banks
Double Data Rate (DDR) SDRAM unbuffered module,
mounted 16 pieces of 128M bits DDR SDRAM
(EDD1208ALTA) sealed in TSOP package. Read and
write operations are performed at the cross points of
the CLK and the /CLK. This high-speed data transfer
is realized by the 2 bits prefetch-pipelined architecture.
Data strobe (DQS) both for read and write are available
for high speed and reliable data bus design. By setting
extended mode register, the on-chip Delay Locked
Loop (DLL) can be set enable or disable. An outline of
the products is 184-pin socket type package (dual lead
out). Therefore, it makes high density mounting
possible without surface mount technology. It provides
common data inputs and outputs.
Decoupling
capacitors are mounted beside each TSOP on the
module board.
Features
184-pin socket type dual in line memory module
(DIMM)
Outline: 133.35mm (Length)
×
31.75mm (Height)
×
4.00mm (Thickness)
Lead pitch: 1.27mm
2.5V power supply (VDD/VDDQ)
SSTL-2 interface for all inputs and outputs
Clock frequency: 133MHz/100MHz (max.)
Data inputs and outputs are synchronized with DQS
4 banks can operate simultaneously and
independently (Component)
Burst read/write operation
Programmable burst length: 2, 4, 8
Burst read stop capability
Programmable burst sequence
Sequential
Interleave
Start addressing capability
Even and Odd
Programmable /CAS latency (CL): 2, 2.5
4096 refresh cycles: 15.6µs (4096/64ms)
2 variations of refresh
Auto refresh
Self refresh
Document No. E0215E10 (Ver. 1.0)
Date Published September 2001 (K)
Printed in Japan
URL: http://www.elpida.com
C
Elpida Memory, Inc. 2001
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

EBD26UB8ALFA-75 Related Products

EBD26UB8ALFA-75 EBD26UB8ALFA-7A EBD26UB8ALFA
Description 256MB Unbuffered DDR SDRAM DIMM 256MB Unbuffered DDR SDRAM DIMM 256MB Unbuffered DDR SDRAM DIMM
Is it Rohs certified? incompatible incompatible -
Maker ELPIDA ELPIDA -
Parts packaging code DIMM DIMM -
package instruction DIMM, DIMM184 DIMM, DIMM184 -
Contacts 184 184 -
Reach Compliance Code unknown unknown -
ECCN code EAR99 EAR99 -
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST -
Maximum access time 0.75 ns 0.75 ns -
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH -
Maximum clock frequency (fCLK) 133 MHz 133 MHz -
I/O type COMMON COMMON -
JESD-30 code R-XDMA-N184 R-XDMA-N184 -
memory density 2147483648 bit 2147483648 bit -
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE -
memory width 64 64 -
Humidity sensitivity level 1 1 -
Number of functions 1 1 -
Number of ports 1 1 -
Number of terminals 184 184 -
word count 33554432 words 33554432 words -
character code 32000000 32000000 -
Operating mode SYNCHRONOUS SYNCHRONOUS -
Maximum operating temperature 70 °C 70 °C -
organize 32MX64 32MX64 -
Output characteristics 3-STATE 3-STATE -
Package body material UNSPECIFIED UNSPECIFIED -
encapsulated code DIMM DIMM -
Encapsulate equivalent code DIMM184 DIMM184 -
Package shape RECTANGULAR RECTANGULAR -
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY -
Peak Reflow Temperature (Celsius) 225 225 -
power supply 2.5 V 2.5 V -
Certification status Not Qualified Not Qualified -
refresh cycle 4096 4096 -
self refresh YES YES -
Maximum supply voltage (Vsup) 2.7 V 2.7 V -
Minimum supply voltage (Vsup) 2.3 V 2.3 V -
Nominal supply voltage (Vsup) 2.5 V 2.5 V -
surface mount NO NO -
technology CMOS CMOS -
Temperature level COMMERCIAL COMMERCIAL -
Terminal form NO LEAD NO LEAD -
Terminal pitch 1.27 mm 1.27 mm -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -

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