3SK131-V11 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 3SK131-V11

3SK131-V11: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size64KB，8 Pages; ManufacturerNEC Electronics

Download Datasheet Parametric Compare View All

3SK131-V11 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4

3SK131-V11 Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
Shell connection	SOURCE
Configuration	SINGLE
Maximum drain current (ID)	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.08 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	21 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK131

RF AMP. FOR VHF TV TUNER

N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR

4PIN MINI MOLD

FEATURES

• Suitable for use as RF amplifier in VHF TV tuner.

• Low C

rss

: 0.05 pF TYP.

• High G

: 23 dB TYP.

• Low NF : 1.3 dB TYP.

PACKAGE DIMENSIONS

(Unit: mm)

0.4

−0.05

0.4

−0.05

0.16

5°

+0.1

−0.06

2.8

−0.3

1.5

−0.1

+0.2

+0.1

+0.2

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

DSX

G1S

G2S

stg

0.6

−0.05

5°

200

125

5°

ELECTRICAL CHARACTERISTICS (T

= 25

CHARACTERISTIC

Drain to Source Breakdown Voltage

Drain Current

Gate1 to Source Cutoff Voltage

Gate2 to Source Cutoff Voltage

Gate1 Reverse Current

Gate2 Reverse Current

Forward Transfer Admittance

SYMBOL

DSX

DSS

G1S(OFF)

G2S(OFF)

G1SS

G2SS

MIN.

TYP.

MAX.

UNIT

PIN CONNECTIONS

1. Source

2. Drain

3. Gate 2

4. Gate 1

TEST CONDITIONS

G1S

= V

G2S

2 V, I

= 10

= 6 V, V

G2S

= 3 V, V

G1S

= 0

= 8 V, V

G2S

= 0, I

= 5

= 8 V V

G1S

= 0, I

= 5

= 0, V

G1S

8 V, V

G2S

= 0

= 0, V

G2S

8 V, V

G1S

= 0

= 6 V, V

G2S

= 3 V, I

= 10 mA

f = 1 kHz

2.0

1.5

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Power Gain

Noise Figure

iss

oss

rss

4.0

2.2

5.0

2.9

0.05

6.5

3.7

0.08

= 6 V, V

G2S

= 3 V, I

= 10 mA

f = 1 MHz

1.2

2.5

= 10 V, V

G2S

= 5 V, I

= 10 mA

f = 200 MHz

DSS

classification

V11 7-13 mA V12 11-19 mA V13 17-25 mA

Document No. P12449EJ2V0DS00 (2nd edition)

(Previous No. TC-1508)

Date Published March 1997 N

Printed in Japan

0 to 0.1

55 to +125

+0.2

−3.1

1.1

0.8

0.4

−0.05

+0.1

(1.9)

ABSOLUTE MAXIMUM RATINGS (T

= 25

(1.8)

0.85 0.95

2.9±0.2

1983

3SK131-V11 Related Products

	3SK131-V11	3SK131-V13	3SK131-V12
Description	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MINIMOLD PACKAGE-4
Maker	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4	4
Reach Compliance Code	unknown	unknown	unknown
Shell connection	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE
Maximum drain current (ID)	0.025 A	0.025 A	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.08 pF	0.08 pF	0.08 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1
Number of terminals	4	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	21 dB	21 dB	21 dB
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

Recommended Resources

Blood pressure sensing circuit diagram of BP01 pressure sensor

Relay interface circuit diagram of amateur wireless transceiver

Limit control circuit diagram

35V, 2A slow start regulated power supply

Password switch circuit

Car wiper automatic control circuit

About the equivalent series resistance problem: For a 700mH large coil (similar to the coil of a contactor), the Rs is 270Ω when tested with a benchtop LCR bridge, but only 77Ω when tested directly with a multimeter resistance range. Therefore, how...; 呜呼哀哉 Analog electronics

ESP32 Simulator: A software that uses a computer to simulate the functions of ESP32.Main features:No need to upload to real hardware for testing Testing two or more ESP32s simultaneously Integration capabilities for c...; dcexpert MicroPython Open Source section

EEWORLD University ---- Blockchain Technology and Application: Blockchain Technology and Applications : https://training.eeworld.com.cn/course/67741Peking University's open course "Blockchain Technology and Applications" is taught by Teacher Xiao Zhen, which main...; 抛砖引玉 Integrated technical exchanges

I can't see any reply for the third time. This time there is one on the 40th floor, but no more on the 41st floor...: 【Arduino】168 Sensor Series Experiments (214) --- 8x32-bit full-color WS2812B screen https://en.eeworld.com/bbs/thread-1222021-1-1.htmlI can't see the nearly ten replies today. Can you please help me c...; eagler8 Suggestions & Announcements

Can common-mode inductors and differential-mode inductors be used for DC filtering?: RT! Is there something wrong with the circuit design?...; oyhprince Analog electronics

Documentation for adding Bluetooth to MicroPython: New documentation for Bluetooth has been added to MicroPython, which is ready for initial use.http://docs.micropython.org/en/latest/library/bluetooth.html...; dcexpert MicroPython Open Source section

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components