GBJ3506 datasheet, PDF - EEWORLD Datasheet

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GBJ3506: Description35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size243KB，4 Pages; ManufacturerTAITRON Components; Websitehttp://www.taitroncomponents.com/; Environmental Compliance

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GBJ3506 Overview

35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ3506 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TAITRON Components
package instruction	R-PSFM-T4
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY, ULRECOGNIZED
Minimum breakdown voltage	600 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4
Maximum non-repetitive peak forward current	350 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	35 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

GBJ3506 Related Products

	GBJ3506	GBJ3501	GBJ3504	GBJ3502	GBJ35005	GBJ3510	GBJ3508
Description	35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to	-	conform to	conform to
Maker	TAITRON Components	TAITRON Components	TAITRON Components	TAITRON Components	-	TAITRON Components	TAITRON Components
package instruction	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	-	R-PSFM-T4	R-PSFM-T4
Reach Compliance Code	unknow	unknow	unknow	unknow	-	unknow	unknow
Other features	HIGH RELIABILITY, ULRECOGNIZED	HIGH RELIABILITY, ULRECOGNIZED	HIGH RELIABILITY, ULRECOGNIZED	HIGH RELIABILITY, ULRECOGNIZED	-	HIGH RELIABILITY, ULRECOGNIZED	HIGH RELIABILITY, ULRECOGNIZED
Minimum breakdown voltage	600 V	100 V	400 V	200 V	-	1000 V	800 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	-	R-PSFM-T4	R-PSFM-T4
Maximum non-repetitive peak forward current	350 A	350 A	350 A	350 A	-	350 A	350 A
Number of components	4	4	4	4	-	4	4
Phase	1	1	1	1	-	1	1
Number of terminals	4	4	4	4	-	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	-	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C
Maximum output current	35 A	35 A	35 A	35 A	-	35 A	35 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V	100 V	400 V	200 V	-	1000 V	800 V
surface mount	NO	NO	NO	NO	-	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

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