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GBJ3508

Description
35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size243KB,4 Pages
ManufacturerTAITRON Components
Websitehttp://www.taitroncomponents.com/
Environmental Compliance
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GBJ3508 Overview

35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ3508 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTAITRON Components
package instructionR-PSFM-T4
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY, ULRECOGNIZED
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current350 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current35 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

GBJ3508 Related Products

GBJ3508 GBJ3501 GBJ3504 GBJ3502 GBJ35005 GBJ3510 GBJ3506
Description 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to conform to - conform to conform to
Maker TAITRON Components TAITRON Components TAITRON Components TAITRON Components - TAITRON Components TAITRON Components
package instruction R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4
Reach Compliance Code unknow unknow unknow unknow - unknow unknow
Other features HIGH RELIABILITY, ULRECOGNIZED HIGH RELIABILITY, ULRECOGNIZED HIGH RELIABILITY, ULRECOGNIZED HIGH RELIABILITY, ULRECOGNIZED - HIGH RELIABILITY, ULRECOGNIZED HIGH RELIABILITY, ULRECOGNIZED
Minimum breakdown voltage 800 V 100 V 400 V 200 V - 1000 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON - SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4 R-PSFM-T4
Maximum non-repetitive peak forward current 350 A 350 A 350 A 350 A - 350 A 350 A
Number of components 4 4 4 4 - 4 4
Phase 1 1 1 1 - 1 1
Number of terminals 4 4 4 4 - 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C - -55 °C -55 °C
Maximum output current 35 A 35 A 35 A 35 A - 35 A 35 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 800 V 100 V 400 V 200 V - 1000 V 600 V
surface mount NO NO NO NO - NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
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