GE28F160C3BD70 datasheet, PDF - EEWORLD Datasheet

GE28F160C3BD70: Description1M X 16 FLASH 3V PROM, 90 ns, PDSO48; Categorystorage storage; File Size680KB，68 Pages; ManufacturerIntel; Websitehttp://www.intel.com/

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GE28F160C3BD70 Overview

1M X 16 FLASH 3V PROM, 90 ns, PDSO48

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	BGA
package instruction	VFBGA, BGA46,6X8,30
Contacts	46
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	70 ns
Other features	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	NO
JESD-30 code	R-PBGA-B46
JESD-609 code	e0
length	7.286 mm
memory density	16777216 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	8,31
Number of terminals	46
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA46,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	1.8/3.3,3/3.3 V
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1 mm
Department size	4K,32K
Maximum standby current	0.000005 A
Maximum slew rate	0.055 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
switch bit	NO
type	NOR TYPE
width	6.964 mm
Base Number Matches	1

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