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2SC1506M

Description
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, TO-220, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size112KB,6 Pages
ManufacturerNEC Electronics
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2SC1506M Overview

Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, TO-220, 2 PIN

2SC1506M Parametric

Parameter NameAttribute value
package instructionTO-220, 2 PIN
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)0.2 A
Collector-based maximum capacity4.5 pF
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PSFM-T2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment15 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
VCEsat-Max2 V
Base Number Matches1

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