2N3439DCSMG4 datasheet, PDF - EEWORLD Datasheet

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2N3439DCSMG4: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 2-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, LCC2, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size24KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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2N3439DCSMG4 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 2-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, LCC2, 6 PIN

2N3439DCSMG4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-CDSO-N6
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	350 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40
JESD-30 code	R-CDSO-N6
JESD-609 code	e4
Number of components	2
Number of terminals	6
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	15 MHz
Base Number Matches	1

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2N3439DCSM

2N3440DCSM

MECHANICAL DATA

Dimensions in mm (inches)

HIGH VOLTAGE, MEDIUM POWER, NPN

DUAL TRANSISTOR IN A

HERMETICALLY SEALED

CERAMIC SURFACE MOUNT PACKAGE

FOR HIGH RELIABILITY APPLICATIONS

FEATURES

1.40 ± 0.15

(0.055 ± 0.006)

0.64 ± 0.08

(0.025 ± 0.003)

2.29 ± 0.20

(0.09 ± 0.008)

1.65 ± 0.13

(0.065 ± 0.005)

• DUAL SILICON PLANAR EPITAXIAL NPN

TRANSISTOR

4.32 ± 0.13

(0.170 ± 0.005)

2.54 ± 0.13

(0.10 ± 0.005)

• HERMETIC CERAMIC SURFACE MOUNT

PACKAGE

• CECC SCREENING OPTIONS

• SPACE QUALITY LEVELS OPTIONS

• HIGH VOLTAGE

0.23

rad.

(0.009)

1.27 ± 0.13

(0.05 ± 0.005)

6.22 ± 0.13

(0.245 ± 0.005)

LCC2 PACKAGE

Underside View

PAD 1 – Collector 1

PAD 2 – Base 1

PAD 3 – Base 2

PAD 4 – Collector 2

PAD 5 – Emitter 2

PAD 6 – Emitter 1

APPLICATIONS:

Dual Hermetically sealed surface mount ver-

sion of the popular 2N3439 and 2N3440 for

high reliability / space applications requiring

small size and low weight devices.

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

CBO

CEO

EBO

stg

Collector – Base Voltage

Collector – Emitter Voltage (I

= 0)

Emitter – Base Voltage (I

= 0)

Collector Current

Per Device Dissipation

Total Device Dissipation

Derate above 25°C (Per Device)

(Total)

Thermal Resistance Junction to Ambient

Storage Temperature

2N3439

450V

350V

500mA

350mW

525mW

2mW / °C

3mW /°C

240°C/W

–55 to 200°C

2N3440

300V

250V

500mA

350mW

525mW

2mW / °C

3mW /°C

240°C/W

–55 to 200°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is

believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in

its use. Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 6584

Issue 1

2N3439DCSMG4 Related Products

	2N3439DCSMG4	2N3440DCSMG4
Description	Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 2-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, LCC2, 6 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 2-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, LCC2, 6 PIN
Is it Rohs certified?	conform to	conform to
package instruction	SMALL OUTLINE, R-CDSO-N6	SMALL OUTLINE, R-CDSO-N6
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	350 V	250 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40	40
JESD-30 code	R-CDSO-N6	R-CDSO-N6
JESD-609 code	e4	e4
Number of components	2	2
Number of terminals	6	6
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	15 MHz	15 MHz
Base Number Matches	1	1

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