2N6845
IRFF9120
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
P–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
12.70
(0.500)
min.
0.89 max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
V
DSS
I
D(cont)
R
DS(on)
2.54
(0.100)
-100V
-4.0A
Ω
0.60Ω
FEATURES
• HERMETICALLY SEALED TO–39 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
3
45°
• SCREENING OPTIONS AVAILABLE
PIN 3 – Drain
TO–39 (TO-205AF) METAL PACKAGE
PIN1 – Source
PIN 2 – Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
T
L
R
θJC
Notes
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
±20V
-4.0A
-2.6A
-16A
20 W
0.16 W/°C
–55 to 150°C
300°C
6.25°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5748
Issue 2
2N6845
IRFF9120
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Forward Transconductance
1
Drain-to-Source Leakage Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
1
Forward Turn–On Time
Mosfet symbol showing the
G
D
Test Conditions
V
GS
= 0
I
D
= - 1mA
V
GS
= - 10V
V
GS
= - 10V
V
DS
= V
GS
V
DS
>
-15V
V
DS
= - 80V
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= - 25V
f = 1MHz
V
GS
= -10V
V
DS
= -50V
V
DD
= -50V
I
D
= - 4.0A
R
G
= 7.5Ω
I
D
= -4.0A
I
D
= - 2.6A
I
D
= - 4.0A
I
D
= -250µA
I
D
= -2.6A
V
GS
= 0
T
J
= 125°C
I
D
= - 1mA
Min.
- 100
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
Reference to 25°C
- 0.10
0.60
0.69
-2
1.25
-25
-250
100
-100
380
170
45
4.3
1.3
1.0
16.3
4.7
9.0
60
100
50
70
- 4.0
- 16
- 4.8
200
3.1
Negligible
-4
V / °C
Ω
V
S
µA
nA
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
pF
nC
ns
A
V
ns
µC
integral reverse p-n junction diode
S
I
S
= - 4.0A
V
GS
= 0V
I
F
= -4.0A
T
J
= 25°C
T
J
= 25°C
d
i
/ d
t
≤
-100A/µs V
DD
≤
-50V
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5748
Issue 2
Domestic Chip Exchange
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