Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 4 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 10 |
| JEDEC-95 code | TO-66 |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN SILVER COPPER |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 3 MHz |
| Base Number Matches | 1 |
| 2N4912.MODR1 | 2N4910R1 | 2N4911R1 | 2N4910 | |
|---|---|---|---|---|
| Description | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN |
| Is it Rohs certified? | conform to | conform to | conform to | incompatible |
| package instruction | FLANGE MOUNT, O-MBFM-P2 | TO-66, 2 PIN | FLANGE MOUNT, O-MBFM-P2 | TO-66, 2 PIN |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 4 A | 4 A | 4 A | 4 A |
| Collector-emitter maximum voltage | 80 V | 40 V | 60 V | 40 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 10 | 10 | 10 | 10 |
| JEDEC-95 code | TO-66 | TO-66 | TO-66 | TO-66 |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 3 MHz | 3 MHz | 3 MHz | 3 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
| JESD-609 code | e1 | e1 | e1 | - |
| Terminal surface | TIN SILVER COPPER | TIN SILVER COPPER | TIN SILVER COPPER | - |
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