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GL34M

Description
0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA
Categorysemiconductor    Discrete semiconductor   
File Size69KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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GL34M Overview

0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA

GL34M Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC, MINIMELF-2
EU RoHS regulationsYes
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
terminal coatingNOT SPECIFIED
Terminal locationEND
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum reverse recovery time1.5 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current0.5000 A
BL
GALAXY ELECTRICAL
SURFACE MOUNT RECTIFIER
FEATURES
Plastic package has
underwriters laboratory
111
flammability classifications
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111
250
o
C/10 seconds at terminals
GL34A
- - -
GL34M
REVERSE VOLTAGE: 50 - 1000 V
CURRENT: 1.0 A
DO - 213AA
SOLDERABLE ENDS
1st BAND
2nd BAND
D2
D1=
0.066
0.060
(1.676)
(1.524)
MECHANICAL DATA
Case:JEDEC DO-213AA,molded plastic over
1111passivated
chip
Terminals:Solder Plated, solderable per MIL-STD-
1111750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0014 ounces, 0.036 gram
0.022(0.559)
0.016(0.406)
0.145(3.683)
0.131(3.327)
0.022(0.559)
0.016(0.406)
D2=D1
0
0.008(0.20)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
GL34A GL34B GL34D GL34G GL34J GL34K GL34M
UNITS
Polarity color bands (2nd Band)
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current
V
@T
L
=75
Peak
forw
ard
surge current
V
8.3ms
single
half-sine-w ave superimposed
V
on rated load (JEDEC Method)
Maximum instantaneous forw ard voltage at
0.5
A
Maximum DC reverse current
at rated DC blockjing voltage
@T
A
=25
o
C
@T
A
=125 C
o
Gray
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
t
rr
Red
100
70
100
Orange Yellow Green
200
140
200
400
280
400
0.5
10.0
1.2
5.0
600
420
600
Blue
800
560
800
Violet
1000
700
1000
V
V
V
A
A
50
35
50
1.3
V
A
50.0
4.0
1.5
Typical junction capacitance(NOTE 2)
pF
S
o
Typical reverse recovery time(NOTE3)
Typical thermal resitance (NOTE
4)
Operating junction temperature range
Storage temperature range
R
JA
T
J
T
STG
150
-55--------+150
-55--------+150
C/W
o
C
NOTE: 1.Measured
at 1.0MHz and applied reverse voltage of 4.0volts
2.Thermal
resistance form junction to ambient and junction to lead P.C.B mounted on 0.27"X0.27"(7.0X7.0mm2) copper pad areas
3.Measured with I
F
=0.5A,I
R
=1.0A,Irr=0.25A.
www.galaxycn.com
4.
Thermal resistance from junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
Document Number 0280055
BL
GALAXY ELECTRICAL
1.

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