Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
package instruction | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | unknown |
Maximum collector current (IC) | 5 A |
Collector-based maximum capacity | 120 pF |
Collector-emitter maximum voltage | 200 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 5 |
JEDEC-95 code | TO-5 |
JESD-30 code | O-MBCY-W3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 200 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Maximum power consumption environment | 15 W |
Maximum power dissipation(Abs) | 15 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 20 MHz |
Maximum off time (toff) | 1500 ns |
Maximum opening time (tons) | 250 ns |
VCEsat-Max | 1 V |
Base Number Matches | 1 |
2N5666 | JANTX2N5666 | JANTXV2N5666 | JAN2N5666 | |
---|---|---|---|---|
Description | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
Maximum collector current (IC) | 5 A | 5 A | 5 A | 5 A |
Collector-based maximum capacity | 120 pF | 120 pF | 120 pF | 120 pF |
Collector-emitter maximum voltage | 200 V | 200 V | 200 V | 200 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 5 | 5 | 5 | 5 |
JEDEC-95 code | TO-5 | TO-5 | TO-5 | TO-5 |
JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
JESD-609 code | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 |
Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C |
Package body material | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | NPN | NPN | NPN | NPN |
Maximum power consumption environment | 15 W | 15 W | 15 W | 15 W |
Maximum power dissipation(Abs) | 15 W | 15 W | 15 W | 15 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | WIRE | WIRE | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 20 MHz | 20 MHz | 20 MHz | 20 MHz |
Maximum off time (toff) | 1500 ns | 1500 ns | 1500 ns | 1500 ns |
Maximum opening time (tons) | 250 ns | 250 ns | 250 ns | 250 ns |
VCEsat-Max | 1 V | 1 V | 1 V | 1 V |
Maker | - | Unitrode Corporation | Unitrode Corporation | Unitrode Corporation |
Guideline | - | MIL | MIL | MIL |