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BSS84

Description
130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size731KB,5 Pages
ManufacturerNanjing International Group Co.,Ltd
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BSS84 Overview

130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

130 mA, 50 V, P沟道, 硅, 小信号, 场效应管

BSS84 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage50 V
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.3600 W
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeUniversal small signal
Maximum leakage current0.1300 A
feedback capacitor12 pF
Maximum drain on-resistance10 ohm

BSS84 Preview

Download Datasheet
SOT-23 Plastic-Encapsulate
MOSFETs
BSS84
P-CHANNEL MOSFET
DONGGUAN NANJING ELECTRONICS LTD.,
V
(BR)DSS
-50 V
R
DS(on)
MAX
 8Ω
@-10V 
10Ω@ -5V 
 
I
D
-0.13A
SOT-23
 
DESCRIPTION
These miniature surface mount MOSFETs reduce power loss conserve
energy, making this device ideal for use in small power management circuitry.
FEATURE
Energy Efficient
Low Threshold Voltage
High-speed Switching
Miniature Surface Mount Package Saves Board Space
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
DC−DC converters,load switching, power management in portable and battery−powered products such
as computers, printers, cellular and cordless telephones.
MARKING
Equivalent Circuit
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(note 1)
@tp <10
μs
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes , Duration
for 5 Seconds
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
STG
T
L
Value
-50
±20
-0.13
-0.52
225
556
150
-55~+150
260
Unit
V
V
A
A
mW
℃/W
1
A-5,Jun,2014
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