2N2329 datasheet, PDF - EEWORLD Datasheet

2N2329: Description1.6A, 400V, SCR, TO-205AD; CategoryAnalog mixed-signal IC Trigger device; File Size83KB，2 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com; Related ProductsFound20parts with similar functions to 2N2329

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1.6A, 400V, SCR, TO-205AD

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
Shell connection	ANODE
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	2 mA
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Maximum leakage current	0.1 mA
On-state non-repetitive peak current	15 A
Number of components	1
Number of terminals	3
Maximum on-state current	1600 A
Maximum operating temperature	125 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	1.6 A
Maximum repetitive peak off-state leakage current	10 µA
Off-state repetitive peak voltage	400 V
Repeated peak reverse voltage	400 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

Part Number	Manufacturer	Description
JAN2N2329	VPT Inc	Silicon Controlled Rectifier,
JANTXV2N2329S	VPT Inc	Silicon Controlled Rectifier,
JANTX2N2329	VPT Inc	Silicon Controlled Rectifier, 2.512A I(T)RMS, 400V V(DRM), 500V V(RRM), 1 Element, TO-5,
JAN2N2329S	VPT Inc	Silicon Controlled Rectifier,
2N2329	Central Semiconductor	SCRs . .
JANTX2N2329S	VPT Inc	Silicon Controlled Rectifier,
2N2329S	VPT Inc	Silicon Controlled Rectifier,
JANTXV2N2329	VPT Inc	Silicon Controlled Rectifier, 2.512A I(T)RMS, 400V V(DRM), 1 Element, TO-5,
2N2329SE3	Microsemi	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, TO-5, 3 PIN
2N2329E3	Microsemi	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, TO-5, 3 PIN
JAN2N2329	VPT Inc	Silicon Controlled Rectifier,
JANTXV2N2329S	VPT Inc	Silicon Controlled Rectifier,
JANTX2N2329	VPT Inc	Silicon Controlled Rectifier, 2.512A I(T)RMS, 400V V(DRM), 500V V(RRM), 1 Element, TO-5,
2N2329	Central Semiconductor	SCRs . .
JAN2N2329S	VPT Inc	Silicon Controlled Rectifier,
JANTX2N2329S	VPT Inc	Silicon Controlled Rectifier,
2N2329S	VPT Inc	Silicon Controlled Rectifier,
JANTXV2N2329	VPT Inc	Silicon Controlled Rectifier, 2.512A I(T)RMS, 400V V(DRM), 1 Element, TO-5,
2N2329SE3	Microsemi	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, TO-5, 3 PIN
2N2329E3	Microsemi	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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