2N3114E1 datasheet, PDF - EEWORLD Datasheet

2N3114E1: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size66KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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2N3114E1 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz
Base Number Matches	1

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