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2N5411.MOD

Description
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size56KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

2N5411.MOD Overview

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-111, Metal, 3 Pin, TO-111, 3 PIN

2N5411.MOD Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionPOST/STUD MOUNT, O-MUPM-D3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-111
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Base Number Matches1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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