2N2907AQCSMG4 datasheet, PDF - EEWORLD Datasheet

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2N2907AQCSMG4: Description0.6A, 60V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, MO-042AA, HERMETIC SEALED, LCC6, 18 PIN; CategoryDiscrete semiconductor The transistor; File Size192KB，3 Pages; ManufacturerSEMELAB; Environmental Compliance

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2N2907AQCSMG4 Overview

0.6A, 60V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, MO-042AA, HERMETIC SEALED, LCC6, 18 PIN

2N2907AQCSMG4 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	LCC
package instruction	CHIP CARRIER, R-XQCC-N18
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	60 V
Configuration	SEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE)	50
JEDEC-95 code	MO-042AA
JESD-30 code	R-XQCC-N18
JESD-609 code	e4
Number of components	4
Number of terminals	18
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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QUAD SILICON PLANAR

EPITAXIAL PNP TRANSISTORS

2N2907AQCSM

•

Low Power, High Speed Saturated Switching

Hermetic Surface Mounted Package.

Ideally suited for High Speed Switching

and General Purpose Applications

Screening Options Available

•

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

TA = 25°C

Total Power Dissipation at

Derate Above 37.5°C

Junction Temperature Range

Storage Temperature Range

Per Device Total Package

-60V

-5V

-600mA

500mW

3.08mW/°C 12.3mW/°C

-65 to +200°C

THERMAL PROPERTIES

(Each Device)

Symbols

θJA

Parameters

Thermal Resistance, Junction To Ambient

Min.

Typ.

Max.

325

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 8325

Issue 1

Page 1 of 3

Website:

http://www.semelab-tt.com

2N2907AQCSMG4 Related Products

	2N2907AQCSMG4
Description	0.6A, 60V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, MO-042AA, HERMETIC SEALED, LCC6, 18 PIN
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	LCC
package instruction	CHIP CARRIER, R-XQCC-N18
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	60 V
Configuration	SEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE)	50
JEDEC-95 code	MO-042AA
JESD-30 code	R-XQCC-N18
JESD-609 code	e4
Number of components	4
Number of terminals	18
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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