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2N6791LCC6-JQR-B

Description
Power Field-Effect Transistor, 2A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39,
CategoryDiscrete semiconductor    The transistor   
File Size55KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

2N6791LCC6-JQR-B Overview

Power Field-Effect Transistor, 2A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39,

2N6791LCC6-JQR-B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage350 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance1.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
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