EEWORLDEEWORLDEEWORLD

Part Number

Search

HM51W16165J-5

Description
16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
Categorystorage    storage   
File Size540KB,35 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Download Datasheet Parametric View All

HM51W16165J-5 Overview

16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh

HM51W16165J-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerELPIDA
Parts packaging codeSOJ
package instructionSOJ, SOJ42,.44
Contacts42
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J42
JESD-609 codee0
length27.06 mm
memory density16777216 bi
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals42
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ42,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height3.76 mm
self refreshNO
Maximum standby current0.001 A
Maximum slew rate0.11 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
EO
Description
Features
HM51W16165 Series
HM51W18165 Series
16 M EDO DRAM (1-Mword
×
16-bit)
4 k Refresh/1 k Refresh
The HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word
×
16-bit. They employ the most advanced CMOS technology for high performance and low power.
HM51W16165 Series, HM51W18165 Series offer Extended Data Out (EDO) Page Mode as a high speed
access mode. They have package variations of standard 400-mil 42-pin plastic SOJ and 400-mil 50-pin
plastic TSOP.
Single 3.3 V (±0.3 V)
Access time: 50 ns/60 ns/70 ns (max)
Power dissipation
Active mode : 396 mW/360mW/324 mW (max) (HM51W16165 Series)
: 684 mW /612 mW /540 mW (max) (HM51W18165 Series)
Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
EDO page mode capability
Refresh cycles
4096 refresh cycles : 64 ms (HM51W16165 Series)
: 128 ms (L-version)
1024 refresh cycles : 16 ms (HM51W18165 Series)
: 128 ms (L-version)
4 variations of refresh
RAS-only
refresh
CAS-before-RAS
refresh
Hidden refresh
Self refresh (L-version)
2CAS-byte control
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
LP
E0153H10 (Ver. 1.0)
(Previous ADE-203-650D (Z))
Jul. 6, 2001 (K)
ro
du
ct

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号