HM62V8100I Series
Wide Temperature Range Version
8 M SRAM (1024-kword
×
8-bit)
ADE-203-1278B (Z)
Rev.2.00
Nov.02.2009
Description
The HM62V8100I Series is 8-Mbit static RAM organized 1,048,576-word
×
8-bit. HM62V8100I Series has realized
higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers
low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged package with
0.75 mm bump pitch or standard 44-pin TSOP II for high density surface mounting.
Features
•
•
•
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 55 ns (Max)
Power dissipation:
Active: 6.0 mW/MHz (Typ)
Standby: 1.5 µW (Typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range: –40 to +85°C
•
•
•
•
•
Rev.2.00, Nov.02.2009, page 1 of
15
HM62V8100-I Series
Ordering Information
Type No.
HM62V8100LTTI-5
HM62V8100LTTI-5SL
Access time
55 ns
55 ns
Package
400-mil 44pin plastic TSOP II (normal-bend type) (TTP-44DE)
Rev.2.00, Nov.02.2009, page 2 of
15
HM62V8100-I Series
Block Diagram
LSB
A5
A6
A7
A4
A3
A9
A10
A11
A12
A13
MSB A14
V
CC
V
SS
•
•
•
•
•
Row
decoder
Memory matrix
2,048 x 4,096
I/O0
Input
data
control
I/O7
•
•
Column I/O
Column decoder
•
•
LSB
MSB
A16 A17A18 A19 A0 A1 A2 A15A8
•
•
CS2
CS1
Control logic
WE
OE
Rev.2.00, Nov.02.2009, page 4 of
15
HM62V8100-I Series
Operation Table
CS1
H
×
L
L
L
CS2
×
L
H
H
H
WE
×
×
H
L
H
OE
×
×
L
×
H
I/O0 to I/O7
High-Z
High-Z
Dout
Din
High-Z
Operation
Standby
Standby
Read
Write
Output disable
Note: H: V
IH
, L: V
IL
,
×:
V
IH
or V
IL
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
Storage temperature range
Storage temperature range under bias
Symbol
V
CC
V
T
P
T
Tstg
Tbias
Value
–0.5 to + 4.6
–0.5* to V
CC
+ 0.3*
1.0
–55 to +125
–40 to +85
1
2
Unit
V
V
W
°C
°C
Notes: 1. V
T
min: –3.0 V for pulse half-width
≤
30 ns.
2. Maximum voltage is +4.6 V.
DC Operating Conditions
Parameter
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range
Note:
Symbol
V
CC
V
SS
V
IH
V
IL
Ta
Min
2.7
0
2.2
–0.3
–40
Typ
3.0
0
—
—
—
Max
3.6
0
Unit
V
V
1
Note
V
CC
+ 0.3 V
0.6
V
85
°C
1. V
IL
min: –3.0 V for pulse half-width
≤
30 ns.
Rev.2.00, Nov.02.2009, page 5 of
15