Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Philips Semiconductors (NXP Semiconductors N.V.) |
package instruction | , |
Reach Compliance Code | unknown |
Is Samacsys | N |
Configuration | Single |
Maximum drain current (Abs) (ID) | 9 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-609 code | e0 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 200 °C |
Polarity/channel type | N-CHANNEL |
Terminal surface | Tin/Lead (Sn/Pb) |
Base Number Matches | 1 |