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ES1JLW RQG

Description
Rectifiers 1A, 600V SM Super Fast Rectifiers
Categorysemiconductor    Discrete semiconductor   
File Size193KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

ES1JLW RQG Overview

Rectifiers 1A, 600V SM Super Fast Rectifiers

ES1JLW RQG Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerTaiwan Semiconductor
Product CategoryRectifiers
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOD-123W-2
Vr - Reverse Voltage600 V
If - Forward Current1 A
TypeFast Recovery Rectifiers
ConfigurationSingle
Vf - Forward Voltage1.7 V
Max Surge Current30 A
Ir - Reverse Current5 uA
Recovery Time35 ns
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingReel
ProductRectifiers
Factory Pack Quantity10000
Unit Weight0.000564 oz
ES1DLW - ES1JLW
Taiwan Semiconductor
CREAT BY ART
1A, 200V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: SOD-123W
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 16 mg (approximately)
SOD-123W
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and applied V
R
=4.0 V
Note 3: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
t
rr
R
θJL
R
θJA
T
J
T
STG
0.95
SYMBOL
ES1DLW
EDLW
200
140
200
ES1GLW
EGLW
400
280
400
1
30
1.30
5
100
20
35
25
80
- 55 to +175
- 55 to +175
1.70
ES1JLW
EJLW
600
420
600
V
V
V
A
A
V
μA
pF
ns
°C/W
°C
°C
UNIT
Document Number: DS_D0000174
Version: A15
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