IC 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM
Parameter Name | Attribute value |
Parts packaging code | MODULE |
package instruction | DIMM, DIMM144,32 |
Contacts | 144 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | DUAL BANK PAGE BURST |
Maximum access time | 5.4 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 133 MHz |
I/O type | COMMON |
JESD-30 code | R-XDMA-N144 |
memory density | 2147483648 bit |
Memory IC Type | SYNCHRONOUS DRAM MODULE |
memory width | 64 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 144 |
word count | 33554432 words |
character code | 32000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 32MX64 |
Output characteristics | 3-STATE |
Package body material | UNSPECIFIED |
encapsulated code | DIMM |
Encapsulate equivalent code | DIMM144,32 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
power supply | 3.3 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
self refresh | YES |
Maximum standby current | 0.008 A |
Maximum slew rate | 1.28 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal pitch | 0.8 mm |
Terminal location | DUAL |
Base Number Matches | 1 |
THLY25N01B75 | THLY25N01B70 | |
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Description | IC 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM | IC 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144, SODIMM-144, Dynamic RAM |
Parts packaging code | MODULE | MODULE |
package instruction | DIMM, DIMM144,32 | DIMM, DIMM144,32 |
Contacts | 144 | 144 |
Reach Compliance Code | unknown | unknown |
ECCN code | EAR99 | EAR99 |
access mode | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
Maximum access time | 5.4 ns | 5.4 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 133 MHz | 143 MHz |
I/O type | COMMON | COMMON |
JESD-30 code | R-XDMA-N144 | R-XDMA-N144 |
memory density | 2147483648 bit | 2147483648 bit |
Memory IC Type | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
memory width | 64 | 64 |
Number of functions | 1 | 1 |
Number of ports | 1 | 1 |
Number of terminals | 144 | 144 |
word count | 33554432 words | 33554432 words |
character code | 32000000 | 32000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C |
organize | 32MX64 | 32MX64 |
Output characteristics | 3-STATE | 3-STATE |
Package body material | UNSPECIFIED | UNSPECIFIED |
encapsulated code | DIMM | DIMM |
Encapsulate equivalent code | DIMM144,32 | DIMM144,32 |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
power supply | 3.3 V | 3.3 V |
Certification status | Not Qualified | Not Qualified |
refresh cycle | 8192 | 8192 |
self refresh | YES | YES |
Maximum standby current | 0.008 A | 0.008 A |
Maximum slew rate | 1.28 mA | 1.36 mA |
Maximum supply voltage (Vsup) | 3.6 V | 3.6 V |
Minimum supply voltage (Vsup) | 3 V | 3 V |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V |
surface mount | NO | NO |
technology | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD |
Terminal pitch | 0.8 mm | 0.8 mm |
Terminal location | DUAL | DUAL |