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WNSC201200WQ

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 1200V V(RRM), Silicon Carbide, TO-247,
CategoryDiscrete semiconductor    diode   
File Size446KB,11 Pages
ManufacturerWeEn Semiconductors
Environmental Compliance
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WNSC201200WQ Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 1200V V(RRM), Silicon Carbide, TO-247,

WNSC201200WQ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerWeEn Semiconductors
Reach Compliance Codeunknown
Factory Lead Time6 weeks
Other featuresFAST RECOVERY
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON CARBIDE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current220 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage1200 V
Maximum reverse current200 µA
Reverse test voltage1200 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
WNSC201200W
Silicon Carbide Diode
Rev.02 - 2 July 2019
Product data sheet
1. General description
Silicon Carbide Schottky diode in a TO247-2L
plastic package, designed for high frequency
switched-mode power supplies.
RoHS
h
alogen-Free
2. Features and benefits
Highly stable switching performance
High forward surge capability I
FSM
Extremely fast reverse recovery time
Superior in efficiency to Silicon Diode alternatives
Reduced losses in associated MOSFET
Reduced EMI
Reduced cooling requirements
RoHS compliant
High junction operating temperature capability (T
j(max)
= 175 °C)
3. Applications
Power factor correction
Telecom / Server SMPS
UPS
PV inverter
PC Silverbox
LED / OLED TV
Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
F(AV)
T
j
Symbol
V
F
Parameter
repetitive peak reverse
voltage
average forward current δ = 0.5 ; square-wave pulse; T
mb
≤ 131 °C;
Fig. 1; Fig. 2; Fig. 3; Fig. 4
junction temperature
Parameter
forward voltage
Conditions
I
F
= 20 A; T
j
= 25 °C;
Fig. 6
I
F
= 20 A; T
j
= 150 °C;
Fig. 6
I
F
= 20 A; T
j
= 175 °C;
Fig. 6
Dynamic characteristics
Q
r
recovered charge
I
F
= 20 A; V
R
= 400 V; dI
F
/dt = 500 A/μs;
T
j
= 25 °C;
Fig. 8
-
52
-
nC
Min
-
-
-
Conditions
Values
1200
20
175
Typ
1.4
1.85
2
Max
1.6
2.3
2.6
Unit
V
A
°C
Unit
V
V
V
Absolute maximum rating
Static characteristics
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