MT47H64M8JN-25EIT:G datasheet, PDF

MT47H64M8JN-25EIT:G: DescriptionDDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60; Categorystorage storage; File Size2MB，133 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT47H64M8JN-25EIT:G Overview

DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Micron Technology
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X11,32
Contacts	60
Reach Compliance Code	not_compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e0
length	10 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	60
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	235
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.007 A
Maximum slew rate	0.215 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead/Silver (Sn/Pb/Ag)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	8 mm
Base Number Matches	1

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