BUZ271-E3045 datasheet, PDF - EEWORLD Datasheet

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BUZ271-E3045: DescriptionPower Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size136KB，6 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BUZ271-E3045 Overview

Power Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

BUZ271-E3045 Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	22 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	88 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

BUZ271-E3045 Related Products

	BUZ271-E3045	BUZ271-E3044	BUZ271-E3046
Description	Power Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Maker	Infineon	Infineon	Infineon
Parts packaging code	TO-220AB	TO-220AB	TO-220AB
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G3	IN-LINE, R-PSIP-T3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	200 mJ	200 mJ	200 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V	50 V	50 V
Maximum drain current (ID)	22 A	22 A	22 A
Maximum drain-source on-resistance	0.15 Ω	0.15 Ω	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G3	R-PSIP-T3
Number of components	1	1	1
Number of terminals	2	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum pulsed drain current (IDM)	88 A	88 A	88 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO
Terminal form	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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