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MT49H16M18CFM-33

Description
DDR DRAM, 16MX18, 0.3ns, CMOS, PBGA144, MICRO, BGA-144
Categorystorage    storage   
File Size2MB,68 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric Compare View All

MT49H16M18CFM-33 Overview

DDR DRAM, 16MX18, 0.3ns, CMOS, PBGA144, MICRO, BGA-144

MT49H16M18CFM-33 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeBGA
package instructionMICRO, BGA-144
Contacts144
Reach Compliance Codenot_compliant
ECCN codeEAR99
access modeMULTI BANK PAGE BURST
Maximum access time0.3 ns
Other featuresAUTO REFRESH
Maximum clock frequency (fCLK)300 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PBGA-B144
JESD-609 codee0
length18.5 mm
memory density301989888 bit
Memory IC TypeDDR DRAM
memory width18
Number of functions1
Number of ports1
Number of terminals144
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
organize16MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA144,12X18,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)235
power supply1.5/1.8,1.8,2.5 V
Certification statusNot Qualified
Maximum seat height0.93 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width11 mm
Base Number Matches1
288Mb: x18 2.5V V
EXT
, 1.8V V
DD
, HSTL, SIO, RLDRAM II
Features
SIO
®
RLDRAM
II
MT49H16M18C – 16 Meg x 18 x 8 banks
Features
• 400 MHz DDR operation (800 Mb/s/pin data rate)
• 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock
frequency)
• Organization
16 Meg x 18 separate I/O
8 banks
• Cyclic bank switching for maximum bandwidth
• Reduced cycle time (20ns at 400 MHz)
• Nonmultiplexed addresses (address multiplexing
option available)
• SRAM-type interface
• Programmable READ latency (RL), row cycle time,
and burst sequence length
• Balanced READ and WRITE latencies in order to
optimize data bus utilization
• Data mask for WRITE commands
• Differential input clocks (CK, CK#)
• Differential input data clocks (DKx, DKx#)
• On-die DLL generates CK edge-aligned data and
output data clock signals
• Data valid signal (QVLD)
• 32ms refresh (8K refresh for each bank; 64K refresh
command must be issued in total each 32ms)
• 144-ball µBGA package
• HSTL I/O (1.5V or 1.8V nominal)
• 25–60Ω matched impedance outputs
• 2.5V V
EXT
, 1.8V V
DD
, 1.5V or 1.8V V
DD
Q I/O
• On-die termination (ODT) R
TT
Figure 1:
144-Ball µBGA
Options
• Clock cycle timing
2.5ns (400 MHz)
3.3ns (300 MHz)
5ns (200 MHz)
• Configuration
16 Meg x 18
• Operating temperature range
Commercial (0° to +95°C)
Industrial (T
C
= –40°C to +95°C;
T
A
= –40°C to +85°C)
• Package
144-ball µBGA
144-ball µBGA (Pb-free)
144-ball FBGA
144-ball FBGA (Pb-free)
Marking
-25
-33
-5
16M18
None
IT
1
FM
BM
2
HU
3
HT
2, 3
Notes: 1. Contact Micron for availability of industrial
temperature products.
2. Contact Micron for availability of Pb-free
products.
3. The FBGA package is being phased out.
PDF: 09005aef815b2df8/Source: 09005aef811ba111
288Mb_RLDRAM_II_SIO_D1.fm - Rev. O 6/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT49H16M18CFM-33 Related Products

MT49H16M18CFM-33 MT49H16M18CHU-33 MT49H16M18CHU-5 MT49H16M18CFM-25 MT49H16M18CFM-5 MT49H16M18CHU-25
Description DDR DRAM, 16MX18, 0.3ns, CMOS, PBGA144, MICRO, BGA-144 DDR DRAM, 16MX18, 0.3ns, CMOS, PBGA144, FBGA-144 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA144, FBGA-144 DDR DRAM, 16MX18, 0.25ns, CMOS, PBGA144, MICRO, BGA-144 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA144, MICRO, BGA-144 DDR DRAM, 16MX18, 0.25ns, CMOS, PBGA144, FBGA-144
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code BGA BGA BGA BGA BGA BGA
package instruction MICRO, BGA-144 FBGA-144 FBGA-144 MICRO, BGA-144 MICRO, BGA-144 FBGA-144
Contacts 144 144 144 144 144 144
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Maximum access time 0.3 ns 0.3 ns 0.5 ns 0.25 ns 0.5 ns 0.25 ns
Other features AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH AUTO REFRESH
Maximum clock frequency (fCLK) 300 MHz 300 MHz 200 MHz 400 MHz 200 MHz 400 MHz
I/O type COMMON SEPARATE SEPARATE COMMON COMMON SEPARATE
interleaved burst length 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8 2,4,8
JESD-30 code R-PBGA-B144 R-PBGA-B144 R-PBGA-B144 R-PBGA-B144 R-PBGA-B144 R-PBGA-B144
JESD-609 code e0 e0 e0 e0 e0 e0
length 18.5 mm 18.5 mm 18.5 mm 18.5 mm 18.5 mm 18.5 mm
memory density 301989888 bit 301989888 bit 301989888 bit 301989888 bit 301989888 bit 301989888 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
memory width 18 18 18 18 18 18
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 144 144 144 144 144 144
word count 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000 16000000 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
organize 16MX18 16MX18 16MX18 16MX18 16MX18 16MX18
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code BGA TBGA TBGA BGA BGA TBGA
Encapsulate equivalent code BGA144,12X18,40/32 BGA144,12X18,40/32 BGA144,12X18,40/32 BGA144,12X18,40/32 BGA144,12X18,40/32 BGA144,12X18,40/32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY, THIN PROFILE GRID ARRAY, THIN PROFILE GRID ARRAY GRID ARRAY GRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius) 235 235 235 235 235 235
power supply 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V 1.5/1.8,1.8,2.5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 0.93 mm 1.2 mm 1.2 mm 0.93 mm 0.93 mm 1.2 mm
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Terminal surface Tin/Lead (Sn/Pb) TIN LEAD SILVER TIN LEAD SILVER Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD SILVER
Terminal form BALL BALL BALL BALL BALL BALL
Terminal pitch 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30 30 30 30
width 11 mm 11 mm 11 mm 11 mm 11 mm 11 mm

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