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CRS14

Description
2 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size180KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

CRS14 Overview

2 A, 30 V, SILICON, RECTIFIER DIODE

CRS14 Parametric

Parameter NameAttribute value
package instructionS-FLAT, 3-2A1A, 2 PIN
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
CRS14
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS14
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Unit: mm
Forward voltage: V
FM
= 0.49 V (max) @ I
F
= 2.0 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for high-density board assembly due to the use of a small
surface-mount package, “S-FLAT
TM
2.6
±
0.1
3.5
±
0.2
Average forward current: I
F (AV)
= 2.0 A
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
30
2.0 (Note 1)
30 (50 Hz)
−40
to 150
−40
to 150
Unit
0.9
±
0.1
+ 0.2
1.6
0.1
0.98
±
0.1
0.16
0 ~ 0.1
V
A
A
°C
°C
ANODE
CATHODE
JEDEC
JEITA
TOSHIBA
3-2A1A
Note 1: Ta
=
64°C : Device mounted on a ceramic board
Board size : 50 mm
×
50 mm
Soldering size : 2 mm
×
2 mm
Board thickness : 0.64 mm
Rectangular waveform (α = 180°), V
R
= 15 V
Weight: 0.013 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-20
0.65
±
0.2
0.65
±
0.2
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